X-ray detection based on complementary metal-oxide-semiconductor sensors
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Complementary metal-oxide-semiconductor (CMOS) sensors can convert X-rays into detectable signals; therefore, they are powerful tools in X-ray detection applications. Herein, we explore the physics behind X-ray detection performed using CMOS sensors. X-ray measurements were obtained using a simulated positioner based on a CMOS sensor, while the X-ray energy was modified by changing the voltage, current, and radiation time. A monitoring control unit collected video data of the detected X-rays. The video images were framed and filtered to detect the effective pixel points (radiation spots). The histograms of the images prove there is a linear relationship between the pixel points and X-ray energy. The relationships between the image pixel points, voltage, and current were quantified, and the resultant correlations were observed to obey some physical laws.
KeywordsX-ray detection Simulated positioner Complementary metal-oxide-semiconductor sensor Effective pixel points
We thank Dr. Gong-Tao Fan and Prof. Hong-Wei Wang of Shanghai Institute of Applied Physics, CAS, for their kind help in the experiments.
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