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A 4H–SiC betavoltaic battery based on a \(^{\textbf{63}}{\textbf{Ni}}\) source

  • Yu-Min Liu
  • Jing-Bin Lu
  • Xiao-Yi Li
  • Xu Xu
  • Rui He
  • Hui-Dong Wang
Article
  • 67 Downloads

Abstract

A 4H–SiC–\(^{63}{\mathrm{Ni}}\) p–n-junction-based betavoltaic battery is investigated. The Monte Carlo method is used to simulate the self-absorption effect of the\(^{63}\hbox {Ni}\) source, the backscattering process, and the transport of beta particles in 4H–SiC material. The main factors that affect the energy conversion efficiencies of the cell are analyzed. Based on the simulation results, it can be calculated that, when the thickness of the \(^{63}\hbox {Ni}\) source increases from \(2\times 10^{-3}\) to \(10\,\upmu \hbox {m}\), the theoretical maximum device conversion efficiency increases from 16.77 to \(23.51\%\) and the total conversion efficiency decreases from 16.73 to \(1.48\%\). Furthermore, a feasible design with a maximum output power density of \(0.36\,\upmu \hbox {W}/\hbox {cm}^{2}\) and an optimal device conversion efficiency of \(23.5\%\) is obtained.

Keywords

4H–SiC–\(^{63}{\mathrm{Ni}}\) betavoltaic battery p–n junction Energy conversion efficiency 

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Copyright information

© Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Chinese Nuclear Society, Science Press China and Springer Nature Singapore Pte Ltd. 2018

Authors and Affiliations

  • Yu-Min Liu
    • 1
  • Jing-Bin Lu
    • 1
  • Xiao-Yi Li
    • 1
  • Xu Xu
    • 1
  • Rui He
    • 1
  • Hui-Dong Wang
    • 1
  1. 1.College of PhysicsJilin UniversityChangchunChina

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