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Graphene prepared by chemical vapour deposition process

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Abstract

The submitted work is focused on graphene preparation using the chemical vapour deposition method employing a cost-saving cold-wall reactor. Optimization of the parameters and conditions of the growth technology was pursued. We succeeded in preparing and transferring monolayer graphene onto a dielectric substrate and in studying its properties by various analytical methods in great detail. The transferred graphene material displays well-resolved band structure. The band structure evidences that undoped material was prepared, with Dirac points lying at the Fermi level.

Graphic Abstract

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Acknowledgements

This study was supported by the Czech Science Foundation, Project No. 17-00607S.

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Correspondence to Petr Machac.

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Machac, P., Cichon, S., Lapcak, L. et al. Graphene prepared by chemical vapour deposition process. Graphene Technol (2020). https://doi.org/10.1007/s41127-019-00029-6

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Keywords

  • Graphene
  • CVD growth
  • Transfer of graphene
  • Band structure of graphene