Electrical Behavior of Lead-Doped Ba-Hexaferrite for Smart Applications
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A low-temperature co-precipitation technique was employed to synthesize Pb-doped Ba-hexaferrite (x = 0.0–1.0) for memory- and sensor-type applications. X-ray diffraction was used for structural study showing impurity phases generated and enhanced in successive composition. This was due to stresses and distortions by Pb due to its volatile nature and difference in ionic radius (1.76 Å) than that of Ba. The nanomaterial has cation ratio Fe3+/Ba2+. Impurity phases enhanced to 30%, and dopant also caused the change in structural parameters. Scanning electron microscopy was employed for morphological study, and it confirmed variations and modification in crystallization process. DC electrical properties ‘Idc’ were measured from room temperature to 758 K, and that showed the decreasing trends in resistivity with increase in temperature. These physical properties of synthesized material could be useful for smart and sensitive applications like memory devices.
KeywordsBaFe12O19 Pb dopant Co-precipitation method Impurity phases Temperature-dependent electrical properties
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