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Iron-doping induced multiferroic in two-dimensional In2Se3

  • Huai Yang (杨淮)
  • Longfei Pan (潘龙飞)
  • Mengqi Xiao (肖梦琪)
  • Jingzhi Fang (房景治)
  • Yu Cui (崔宇)
  • Zhongming Wei (魏钟鸣)Email author
Articles
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Abstract

Multiferroic materials exhibit tremendous potentials in novel magnetoelectric devices such as high-density non-volatile storage. Herein, we report the coexistence of ferroelectricity and ferromagnetism in two-dimensional Fe-doped In2Se3 (Fe0.16In1.84Se3, FIS). The Fe atoms were doped at the In atom sites and the Fe content is ∼3.22% according to the experiments. Our first-principles calculation based on the density-functional theory predicts a magnetic moment of 5 µB per Fe atom when Fe substitutes In sites in In2Se3. The theoretical prediction was further confirmed experimentally by magnetic measurement. The results indicate that pure In2Se3 is diamagnetic, whereas FIS exhibits ferromagnetic behavior with a parallel anisotropy at 2 K and a Curie temperature of ∼8 K. Furthermore, the sample maintains stable room-temperature ferroelectricity in piezoresponse force microscopy (PFM) measurement after the introduction of Fe atom into the ferroelectric In2Se3 nanoflakes. The findings indicate that the layered Fe0.16In1.84Se3 materials have potential in future nanoelectronic, magnetic, and optoelectronic applications.

Keywords

2D materials multiferroic iron-doping In2Se3 

铁掺杂诱导二维硒化铟的多铁性

摘要

多铁材料具有巨大的潜力, 可应用于新型磁电设备, 如高密 度非易失性存储等. 在本工作中, 我们报道了一种具有铁电性和铁 磁性共存特性的新型二维铁掺杂硒化铟. 实验结果显示, Fe原子在 In原子位点进行了替位掺杂, Fe的含量约为3.22%, 其化学式为 Fe0.16In1.84Se3. 基于密度泛函理论第一性原理计算预测, 当Fe替代 硒化铟中In的位置时, 每个Fe原子的磁矩为5 µB. 我们通过量子干 涉超导测试进一步证实了理论预测. 磁性测量表明纯硒化铟是抗 磁性的, 而Fe0.16In1.84Se3表现出铁磁行为, 在2 K时具有平行各向异 性, 居里温度约为8 K. 此外, 压电力响应测试表明Fe原子掺杂进入 铁电硒化铟纳米薄片后仍保持稳定的室温铁电性. 研究结果表明, 层状多铁材料Fe0.16In1.84Se3在未来的纳米电子、磁性和光电器件中 具有潜在的应用前景.

Notes

Acknowledgements

This work was financially supported by the National Key Research and Development Program of China (2017YFA0207500), the National Natural Science Foundation of China (61622406, 61571415 and 51502283), the Strategic Priority Research Program of Chinese Academy of Sciences (XDB30000000), and Beijing Academy of Quantum Information Sciences (Y18G04).

Author contributions

Yang H and Wei Z conceived the study. Yang H conducted most experiments and wrote the manuscript with support from Wei Z. Pan L performed the DFT calculations and wrote the theory part. Xiao M, Fang J and Cui Y provided experimental assistance and theoretical discussion. All authors contributed to the general discussion.

Conflict of interest

The authors declare that they have no conflict of interest.

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Copyright information

© Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Huai Yang (杨淮)
    • 1
  • Longfei Pan (潘龙飞)
    • 1
  • Mengqi Xiao (肖梦琪)
    • 1
  • Jingzhi Fang (房景治)
    • 1
  • Yu Cui (崔宇)
    • 1
  • Zhongming Wei (魏钟鸣)
    • 1
    • 2
    Email author
  1. 1.State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of SciencesBeijingChina
  2. 2.Beijing Academy of Quantum Information SciencesBeijingChina

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