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Science China Materials

, Volume 58, Issue 7, pp 566–573 | Cite as

Large-scale solvent-thermal synthesis of graphene/magnetite/conductive oligomer ternary composites for microwave absorption

  • Dong-Xu He
  • Yao Qiu
  • Lin-Ling Li
  • Rui Zhao
  • Wei-Dong Xue
Articles

Abstract

Nanocomposites exhibiting high electric conductivity and high saturation magnetization were synthesized in bulk using a solvent-thermal route, which combined the hybridization growth of Fe3O4 nanoparticles, graphene oxide, and a conductive oligomer in one step. The hybrid spheres with diameters of 100–300 nm (mostly approximately 200 nm) consisted of a homogenous phase without obvious interfaces between the ternary components. The electric conductivity of the hybrid material was greatly improved after heat treatment at high temperature. Because of the interfacial polarization and good separation property due to its magnetism properties, the interpenetrating nature of the materials yielded good synergistic effects on the electromagnetic wave absorbing properties. The multi-frequency reflection band covering the C band and Ku band with a maximum reflection loss of −45 dB for a thickness of 5 mm is promising for lightweight and strong electromagnetic attenuation applications.

Keywords

Graphene Oxide Microwave Absorption Reflection Loss Science China Material Ternary Composite 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

中文摘要

石墨烯材料优异的性能使其在各个领域得到广泛的应用. 本文利用水热法合成出了具有高电导率和磁饱和磁化强度的石墨烯/四氧化三铁/高分子化合物三元复合纳米材料, 经高温处理进一步提升了该材料的电导率. 该材料所形成的直径在100–300 nm之间的三元微球与石墨烯交联形成的互穿网络结构, 使其不同组分在电磁波吸收方面表现出了良好的协同效应. 通过测试表明吸波层厚度为5 mm时最大反射损耗达到了−45 dB, 且具有较大的吸收带宽. 这些优异的性能展现了该材料在电磁屏蔽方向的广阔的应用前景.

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Copyright information

© Science China Press and Springer-Verlag Berlin Heidelberg 2015

Authors and Affiliations

  1. 1.Institute of Applied Electrochemistry, State Key Laboratory of Electronic Thin Films and Integrated Devices, Institute of Microelectronics and Solid-State ElectronicsUniversity of Electronic Science and Technology of ChinaChengduChina

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