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Strain-Induced Dielectric Enhancement in AlN-Based Multiferroic Layered Structure

  • Shuvam Pawar
  • Anuj Kumar
  • Davinder KaurEmail author
ICFSMA 2019
  • 24 Downloads

Abstract

In this work, a lead-free magnetoelectric composite of AlN (300 nm)/NiMnIn (300 nm) structure has been fabricated using DC magnetron sputtering. The AlN-based multilayered structure on NiMnIn layer exhibits a (002) oriented wurtzite growth with columnar structure perpendicular to the substrate. The layered structure has low level of leakage current which is beneficial for reducing dielectric loses. The Piezoresponse of the fabricated multilayered structure is measured by Piezo force microscopy and found to be about 5.17 pm/V. The magnetization versus temperature graph shows a martensite transformation at about 273–295 K. The stain produced during this transformation is visualized in terms of variation in the dielectric constant of the fabricated heterostructure. The transformation region is also verified by resistance versus temperature behavior. Such AlN-based multilayered structures with enhanced dielectric constant are useful for futuristic magnetic field sensing and Microelectromechanical system-based device applications.

Keywords

Multiferroic Sputtering Piezoelectric Dielectric 

Notes

Acknowledgement

The financial support provided by the Department of Science & Technology (DST), India, under Nano Mission with Reference No. SR/NM/NT-1065/2015 (G) is highly acknowledged. The author Shuvam Pawar is highly thankful to Ministry of Human Resource Development (MHRD), India, for the award of Senior Research Fellowship (SRF).

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Copyright information

© ASM International 2019

Authors and Affiliations

  1. 1.FNRL LabIndian Institute of Technology RoorkeeRoorkeeIndia

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