Environmental impact of concentration of slurry components in thick copper CMP

Article

Abstract

wChemical mechanical polishing (CMP) is the dirtiest semiconductor process using a slurry containing chemicals and abrasives. CMP process consumes a huge amount of slurry, which affects environmental sustainability negatively. The semiconductor industry has attempted to evaluate and reduce the carbon dioxide equivalent (CDE) for environmental sustainability. In this study, the environmental impact of the concentration of the slurry components in CMP of thick copper films is investigated. The selected slurry components for copper CMP are citric acid, hydrogen peroxide (H2O2), abrasive, and benzotriazole (BTA). The carbon intensity of each slurry component is estimated from previously reported studies. During the experiments, the material removal rates (MRRs) are measured for various compositions of the slurry. The CDE is obtained by measuring electric energy, slurry, and ultrapure water (UPW) consumptions. We find that citric acid and BTA positively and negatively influence the CDE, respectively. Further, 2 wt.% of H2O2 and 4 wt.% of abrasive result in the lowest values of the CDE in thick copper CMP.

Keywords

Chemical mechanical polishing (CMP) Thick copper film Environmental impact Slurry component Carbon dioxide equivalent (CDE) 

Nomenclature

CDEcycle

Carbon dioxide equivalent (CDE) of one cycle of CMP process

CDEe

Total CDE of electric energy consumption

CDEs

Total CDE of slurry consumption

CDEU

Total CDE of ultrapure water (UPW) consumption

CDEetc

Total CDE of other consumables

Econ

Electric energy consumption during idling, conditioning, wetting, wafer loading and unloading, and rinsing

Ep

Electric energy consumption during polishing step

Ge

Global warming potential (GWP) of electric energy consumption

Sw

Slurry flow rate for wetting

tw

Process time for wetting

Sp

Slurry flow rate for polishing

tp

Process time for polishing

Is

Carbon intensity of slurry

Ui

UPW flow rates for idling

Uc

UPW flow rates for conditioning

Ur

UPW flow rates for rinsing

ti

UPW supplying time in idling

tc

UPW supplying time in conditioning

tr

UPW supplying time in rinsing

Iu

Carbon intensity of UPW

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References

  1. 1.
    The Guardian, “July 2016 was World’s Hottest Month since Records Began, Says Nasa,” https://www.theguardian.com/environment/ 2016/aug/16/july-2016-was-worlds-hottest-month-since-records-began-says-nasa (Accessed 27 July 2016)Google Scholar
  2. 2.
    Branham, M. S. and Gutowski, T. G., “Deconstructing Energy Use in Microelectronics Manufacturing: An Experimental Case Study of a Mems Fabrication Facility,” Environmental Science & Technology, Vol. 44, No. 11, pp. 4295–4301, 2010.CrossRefGoogle Scholar
  3. 3.
    Krishnan, N., Boyd, S., Somani, A., Raoux, S., Clark, D., et al., “A Hybrid Life Cycle Inventory of Nano-Scale Semiconductor Manufacturing,” Environmental Science & Technology, Vol. 42, No. 8, pp. 3069–3075, 2008.CrossRefGoogle Scholar
  4. 4.
    Murphy, C. F., Kenig, G. A., Allen, D. T., Laurent, J.-P., and Dyer, D. E., “Development of Parametric Material, Energy, and Emission Inventories for Wafer Fabrication in the Semiconductor Industry,” Environmental Science & Technology, Vol. 37, No. 23, pp. 5373–5382, 2003.CrossRefGoogle Scholar
  5. 5.
    Lee, H., Lee, H., Jeong, H., Choi, S., Lee, Y., et al., “Macroscopic and Microscopic Investigation on Chemical Mechanical Polishing of Sapphire Wafer,” Journal of Nanoscience and Nanotechnology, Vol. 12, No. 2, pp. 1256–1259, 2012.CrossRefGoogle Scholar
  6. 6.
    Lee, H., Lee, D., and Jeong, H., “Mechanical Aspects of the Chemical Mechanical Polishing Process: A Review,” Int. J. Precis. Eng. Manuf., Vol. 17, No. 4, pp. 525–536, 2016.MathSciNetCrossRefGoogle Scholar
  7. 7.
    Lee, H., Park, S., and Jeong, H., “Evaluation of Environmental Impacts during Chemical Mechanical Polishing (CMP) for Sustainable Manufacturing,” Journal of Mechanical Science and Technology, Vol. 27, No. 2, pp. 511–518, 2013.CrossRefGoogle Scholar
  8. 8.
    Lee, H., Dornfeld, D. A., and Jeong, H., “Mathematical Model-Based Evaluation Methodology for Environmental Burden of Chemical Mechanical Planarization Process,” Int. J. Precis. Eng. Manuf.-Green Tech., Vol. 1, No. 1, pp. 11–15, 2014.CrossRefGoogle Scholar
  9. 9.
    Boyd, S. B., Horvath, A., and Dornfeld, D. A., “Supplementary Data for ‘Life-Cycle Assessment of Computational Logic Produced from 1995 through 2010’,” Environmental Research Letters, Vol. 5, No. 1, Paper No. 014011, 2010.Google Scholar
  10. 10.
    Lee, Y., Seo, Y.-J., Lee, H., and Jeong, H., “Effect of Diluted Colloidal Silica Slurry Mixed with Ceria Abrasives on CMP Characteristic,” Int. J. Precis. Eng. Manuf.-Green Tech., Vol. 3, No. 1, pp. 13–17, 2016.CrossRefGoogle Scholar
  11. 11.
    Lee, H., Joo, S., Kim, H., and Jeong, H., “Chemical Mechanical Planarization Method for Thick Copper Films of Micro-Electro-Mechanical Systems and Integrated Circuits,” Japanese Journal of Applied Physics, Vol. 47, No. 7R, pp. 5708–5711, 2008.CrossRefGoogle Scholar
  12. 12.
    Tsai, T. C., Tsao, W. C., Lin, W., Hsu, C. L., Lin, C. L., et al., “CMP Process Development for the via-Middle 3D TSV Applications at 28 nm Technology Node,” Microelectronic Engineering, Vol. 92, pp. 29–33, 2012.CrossRefGoogle Scholar
  13. 13.
    Jeong, M., Jo, S., Lee, H., Lee, A., Kang, C. Y., et al., “Chemical Mechanical Planarization of Copper Bumps on Printed Circuit Board,” Int. J. Precis. Eng. Manuf., Vol. 12, No. 1, pp. 149–152, 2011.CrossRefGoogle Scholar
  14. 14.
    Jang, S., Jeong, H., Yuh, M., and Park, J., “Effect of Surfactant on Package Substrate in Chemical Mechanical Planarization,” Int. J. Precis. Eng. Manuf.-Green Tech., Vol. 2, No. 1, pp. 59–63, 2015.CrossRefGoogle Scholar
  15. 15.
    Ministry of Environment, “LCI DB,” http://www.epd.or.kr/lci/ lci_db.asp (Accessed 27 July 2016)Google Scholar
  16. 16.
    EPSIS, “Electric Power Statistics Information System,” http:// epsis.kpx.or.kr/epsis/epsisMain.do (Accessed 27 July 2016)Google Scholar
  17. 17.
    Gorantla, V. and Babu, S. V., “Comparison of Glycine and Citric Acid as Complexing Agents in Copper Chemical Mechanical Polishing Slurries,” Materials Research Society Symposium Proceedings, Vol. 767, pp. F6.7.1–F6.7.6, 2003.Google Scholar
  18. 18.
    Lee, H., Park, B., and Jeong, H., “Influence of Slurry Components on Uniformity in Copper Chemical Mechanical Planarization,” Microelectronic Engineering, Vol. 85, No. 4, pp. 689–696, 2008.CrossRefGoogle Scholar
  19. 19.
    Gorantla, V., Assiongbon, K. A., Babu, S. V., and Roy, D., “Citric Acid as a Complexing Agent in CMP of Copper Investigation of Surface Reactions Using Impedance Spectroscopy,” Journal of the Electrochemical Society, Vol. 152, No. 5, pp. G404–G410, 2005.CrossRefGoogle Scholar
  20. 20.
    Du, T., Vijayakumar, A., and Desai, V., “Effect of Hydrogen Peroxide on Oxidation of Copper in CMP Slurries Containing Glycine and Cu Ions,” Electrochimica Acta, Vol. 49, No. 25, pp. 4505–4512, 2004.CrossRefGoogle Scholar

Copyright information

© Korean Society for Precision Engineering 2017

Authors and Affiliations

  1. 1.Departsment of Mechanical EngineeringTongmyong UniversityBusanSouth Korea

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