Growth of Gallium Nitride Films on Multilayer Graphene Template Using Plasma-Enhanced Atomic Layer Deposition
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In this work, the GaN thin films were directly deposited on multilayer graphene (MLG) by plasma-enhanced atomic layer deposition. The deposition was carried out at a low temperature using triethylgallium (TEGa) precursor and Ar/N2/H2 plasma. Chemical properties of the bulk GaN and GaN–graphene interface were analyzed using X-ray photoelectron spectroscopy. The sharp interface between GaN and graphene was verified via X-ray reflectivity and transmission electron microscope. The microstructures and the nucleation behaviors of the GaN grown on graphene have been also studied. The results of grazing incidence X-ray diffraction and Raman spectrum indicate that the as-deposited sample is polycrystalline with wurtzite structure and has a weakly tensile stress. Optical properties of the sample were investigated by photoluminescence (PL) at room temperature. The successful growth of GaN on MLG at a low temperature opens up the possibility of ameliorating the performance of electronic and optical devices based on GaN/graphene heterojunction.
KeywordsPlasma-enhanced atomic layer deposition Gallium nitride Graphene Interface microstructure
This work was supported financially by the National Natural Science Foundation of China (No. 110751402347), the Beijing Natural Science Foundation (Nos. 4173077 and 2184112), the Fundamental Research Funds for the Central Universities, China (Nos. FRF-BR-16-018A, FRF-TP-17-022A1, FRF-TP-17-069A1 and 06400071), the China Postdoctoral Science Foundation (No. 2018M631333) and the Youth Innovation Promotion Association of Chinese Academy of Sciences (No. 2015387).
- S. Tongay, M. Lemaitre, X. Miao, B. Gila, B.R. Appleton, A.F. Hebard, Phys. Rev. X 2, 011002 (2012)Google Scholar
- F. Giannazzo, G. Fisichella, G. Greco, E. Schilirò, I. Deretzis, R. Lo Nigro, A. La Magna, F. Roccaforte, F. Iucolano, S. Lo Verso, S. Ravesi, P. Prystawko, P. Kruszewski, M. Leszczyński, R. Dagher, E. Frayssinet, A. Michon, Y. Cordier, Phys. Status Solidi A 215, 1700653 (2017)CrossRefGoogle Scholar