Journal of Advanced Ceramics

, Volume 8, Issue 4, pp 519–526 | Cite as

Ba substitution for enhancement of the thermoelectric properties of LaCoO3 ceramics (0⩽x⩽0.75)

  • Mohamed Ali Bousnina
  • Fabien Giovannelli
  • Loïc Perriere
  • Guillaume Guegan
  • Fabian DelormeEmail author
Open Access
Research Article


In the present work, dense perovskite ceramics were successfully prepared from a series of La1–xBaxCoO3 solid solutions in the range of substitution 0 ⩽ x ⩽ 0.75 using solid state reaction and conventional sintering. Structural properties of La1–xBaxCoO3 were systematically investigated and thermoelectric properties were measured in the temperature range of 330–1000 K. The results show that the thermoelectric properties of Ba-substituted LaCoO3 depend on x. Indeed, at 330 K, electrical conductivity presents an optimum value for x = 0.25 with a value of σmax ≈ 2.2×105 S·m−1 whereas the Seebeck coefficient decreases when x and/or the temperature increases. The Ba-substituted LaCoO3 samples exhibit p-type semiconducting behaviour. The best power factor value found is 3.4×10−4 W·m−1·K−2 at 330 K for x = 0.075, which is 10% higher than the optimum value measured in La1–xSrxCoO3 for x = 0.05. The thermal diffusivity and thermal conductivity increase with increasing temperature and Ba concentration. La1–xBaxCoO3 shows a maximum figure of merit (ZT = 0.048) for x = 0.05 at 330 K, 25% higher than the best value in La1−xSrxCoO3 compounds.


perovskite Ba-substituted LaCoO3 oxide thermoelectric p-type semiconductor 



The authors acknowledge Programme d’Investissment d’Avenir PIA “Tours 2015” for the financial support.


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Authors and Affiliations

  • Mohamed Ali Bousnina
    • 1
    • 2
  • Fabien Giovannelli
    • 1
  • Loïc Perriere
    • 3
  • Guillaume Guegan
    • 4
  • Fabian Delorme
    • 1
    Email author
  1. 1.Université François Rabelais de Tours, CNRS, INSA CVL, GREMAN UMR7347, IUT de BloisBlois CedexFrance
  2. 2.Université Paris 13, Sorbonne Paris Cite, Laboratoire des Sciences des Procédés et des Matériaux, CNRS, UPR 3407VilletaneuseFrance
  3. 3.Institut de Chimie et des Matériaux Paris-Est, UMR 7182 CNRS-UPECThiaisFrance
  4. 4.ST MicroelectronicsToursFrance

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