High Charge Carrier Mobility in Two Dimensional Indium (III) Isophthalic Acid Based Frameworks
- 642 Downloads
The effect of dimensionality (1D to 2D) on charge carrier mobility have been studied thoroughly on three In(III)-isophthalate based MOFs [In-IA-1D, In-IA-2D-1 and -2]. In-IA-1D possess 1D nanotubular architecture with [(CH3)2NH2]+. In-IA-2D-1 have 2D layers containing only [(CH3)2NH2]+ cations. Whereas, In-IA-2D-2 have [(CH3)2NH2]+ cations as well as solvent DMF molecule inside the crystal structure. Due to presence of the π–π stacking arrangement among the phenyl rings of IA moieties facilitates the high charge carrier mobility (4.6 × 10−3 cm2 V−1 s−1 at VG = −40 V) in In-IA-2D-2. However, In-IA-1D and In-IA-2D-1 does not show any charge carrier mobility due to absence of π–π stacking arrangement.
KeywordsMetal organic framework Charge carrier mobility Coordination chemistry π–π stacking
TP acknowledge CSIR for SRF. RB acknowledges CSIR’s Five Year Plan Project (CSC0122 and CSC0102) for funding. Financial assistance from BRNS (2011/37C/44/BRNS) is acknowledged. We also acknowledge Dr K. Krishnamoorthy and Mr Arulraj Arulkashmir for their kind help regarding charge carrier mobility studies.
- 3.Kang SJ, Bae I, Park YJ, Park TH, Sung J, Yoon SC, Kim KH, Choi DH, Park C (2009) Non-volatile ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) memory based on a single-crystalline tri-isopropylsilylethynyl pentacene field-effect transistor. Adv Funct Mater 19:1609–1616CrossRefGoogle Scholar