Photoluminescent, magnetic, and semiconductive properties of a terbium material
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A terbium material is prepared under hydrothermal conditions and structurally characterized by X-ray diffraction technique. This compound is characterized by an isolated structure. Solid-state photoluminescence measurement discovers that it shows a strong emission in the green region. The sharp bands at 490, 544, 585, and 620 nm correspond to the characteristic emission 5D4–7FJ transitions (J = 6, 5, 4, and 3, respectively) of the Tb3+ ions. Solid-state diffuse reflectance spectrum reveals that the existence of a wide optical bandgap of 4.83 eV, indicating that it is potentially a wide band-gap semiconductor. Magnetic properties of the compound are investigated. The magnetic susceptibility obeys the Curie–Weiss law (χm = c/( T− θ)) with c = 10.55(8) K and a negative Weiss constant θ = − 1.11(7) K; this suggests the presence of an antiferromagnetic interaction in this compound.
A terbium compound has been prepared and it features an isolated structure. Solid-state photoluminescence measurement reveals that it shows a strong emission in the green region. Solid-state diffuse reflectance spectrum reveals an optical bandgap of 4.83 eV. Magnetic properties discover that it features antiferromagnetic interaction.
KeywordsBandgap Magnetism Terbium Photoluminescence Semiconductor
This work was supported by the NSF of China (21361013), Jiangxi Provincial Department of Education’s Item of Science and Technology (GJJ170637), the open foundation (20180008, 20150019) of the State Key Laboratory of Structural Chemistry, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, and the open foundation (ST201522007) of the Key Laboratory of Jiangxi Province for Persistant Pollutants Control and Resources Recycle (Nanchang Hangkong University).
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