Enhanced Ultra-violet Photodetection Based on a Heterojunction Consisted of ZnO Nanowires and Single-Layer Graphene on Silicon Substrate
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In this study, heterojunction photoelectric devices based ZnO nanowires were fabricated on p-Si substrate with and without single-layer graphene as insert layer. ZnO nanowires and graphene were prepared by hydrothermal method and chemical vapor deposition respectively. The effect of insert layer on the morphology of ZnO nanowires was very weak as can be seen from scanning electron microscope and X-ray diffraction. Raman scattering showed that the graphene prepared was a single-layer structure. The ultraviolet detection performance of photodetectors with single graphene insert layer was much better than that of photodetectors without single graphene insert layer. The ultraviolet irradiation sensitivity of photodetectors with single graphene insert layer was up to 1071 which was improved 7 times than that of photodetectors without single graphene insert layer. Moreover, photodetectors with single graphene insert layer had faster response time (1.02 s) and recovery time (0.34 s).
KeywordsUV photodetection Heterojunction ZnO nanowires Single-layer graphene
This work was financially supported by the National Natural Science Foundation of China (61904054, 11574083), the Project Plan of Key Scientific Research in University of Henan Province (19A510003), and Science and Technology Development Program in Henan Province (192102210081). The authors thank Professor Guojia Fang of Wuhan University for his help and suggestions. The authors also thank the nanocenter of Wuhan University for XRD, Raman and SEM measurements.
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