Electronic Materials Letters

, Volume 14, Issue 3, pp 357–362 | Cite as

Photoresponse and Field Effect Transport Studies in InAsP–InP Core–Shell Nanowires

  • Rochelle Lee
  • Min Hyeok Jo
  • TaeWan Kim
  • Hyo Jin Kim
  • Doo Gun Kim
  • Jae Cheol ShinEmail author


A ternary InAsyP1−y alloy is suitable for an application to near-infrared (NIR) optical devices as their direct bandgap energy covers the entire NIR band. A nanowire (NW) system allows an epitaxial integration of InAsyP1−y alloy on any type of substrate since the lattice mismatch strain can be relieved through the NW sidewall. Nevertheless, the very large surface to volume ratio feature of the NWs leads to enormous surface states which are susceptible to surface recombination of free carriers. Here, ternary InAs0.75P0.25 NWs are grown with InP passivation layer (i.e., core–shell structure) to minimize the influence of the surface states, thus increasing their optical and electrical properties. A photoresponse study was achieved through the modeled band structure of the grown NWs. The model and experimental results suggest that 5-nm-thick InP shell efficiently passivates the surface states of the InAs0.75P0.25 NWs. The fabricated core–shell photodetectors and field-effect transistors exhibit improved photoresponse and transport properties compared to its counterpart core-only structure.


InAsP III–V semiconductor Nanowires Passivation Core–shell structure 



This work was supported by the National Research Foundation of Korea (NRF-2017R1C1B2010906 and NRF-2017M1A2A2048904) and was a part of the project titled ‘Development of real-time measuring system of basic environment for the water quality monitoring of the aquaculture farm,’ funded by the Ministry of Oceans and Fisheries, Korea (No. 20150303).


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Copyright information

© The Korean Institute of Metals and Materials 2018

Authors and Affiliations

  • Rochelle Lee
    • 1
  • Min Hyeok Jo
    • 1
  • TaeWan Kim
    • 2
  • Hyo Jin Kim
    • 3
  • Doo Gun Kim
    • 3
  • Jae Cheol Shin
    • 1
    Email author
  1. 1.Department of PhysicsYeungnam UniversityGyeongsanRepublic of Korea
  2. 2.Advanced Instrumentation InstituteKorea Research Institute of Standards and Science (KRISS)DaejeonKorea
  3. 3.Korea Photonics Technology Institute (KOPTI)GwangjuRepublic of Korea

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