Electronic Materials Letters

, Volume 8, Issue 4, pp 423–428 | Cite as

Nanoscale dry etching of germanium by using inductively coupled CF4 plasma

  • Kyu-Hwan Shim
  • Ha Yong Yang
  • Yeon-Ho Kil
  • Hyeon Deok Yang
  • Jong-Han Yang
  • Woong-Ki Hong
  • Sukill Kang
  • Tae Soo Jeong
  • Taek Sung Kim
Article

Abstract

The nanoscale dry etching of germanium was investigated by using inductively coupled CF4 plasma and electron-beam lithography. The optimal dose of PMMA as E-beam lithography resist was ∼200 mC/cm2. When ICP Power was 200W, CF4 gas flow rate was 40 sccm, and process pressure was 20 mTorr, it had a smooth surface and good etch rate. The etching selectivity of Ge wafer to PMMA resist was as low as ∼1.5. Various sub-100 nm dry-etching patterns have been obtained. SEM pictures showed good profile qualities with a smooth etching sidewall and ultrasmall etching features.

Keywords

nanoscale etching plasma ICP Ge 

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Copyright information

© The Korean Institute of Metals and Materials and Springer Netherlands 2012

Authors and Affiliations

  • Kyu-Hwan Shim
    • 1
  • Ha Yong Yang
    • 1
  • Yeon-Ho Kil
    • 1
  • Hyeon Deok Yang
    • 1
  • Jong-Han Yang
    • 1
  • Woong-Ki Hong
    • 1
  • Sukill Kang
    • 1
  • Tae Soo Jeong
    • 1
  • Taek Sung Kim
    • 1
  1. 1.Semiconductor Physics Research Center, School of Semiconductor and Chemical Engineering, and Department of PhysicsChonbuk National UniversityJeonjuKorea

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