3D Research

, 6:28 | Cite as

Configuration, Dimension and Density Control of 3-D Gold Nanostructures on Various Type-B GaAs Surfaces by the Systematic Variation of Annealing Temperature, Annealing Duration and Deposition Amount

  • Daewoo Lee
  • Mao Sui
  • Ming-Yu Li
  • Puran Pandey
  • Quanzhen Zhang
  • Eun-Soo Kim
  • Jihoon Lee
3DR Express

Abstract

Metallic nanoparticles have received extensive research attention due to their potential to be utilized in catalytic, electronic and optical applications. Tunable feature of quantum effect related to the configuration, dimension as well as the density of nanoparticles makes them appropriate building blocks for their applications at the nano-scale. In this paper, we systematically investigate the fabrication of self-assembled Au nanoparticles on high-index type-B GaAs (n11), where n is 9, 8, 4, and 2. By means of varying annealing temperature, Au deposition amount and annealing duration, the evolution of Au nanoparticles in terms of the average height, lateral diameter and average density is systematically studied. We observe that the variation of annealing temperature leads to an abrupt configuration evolution from the wiggly Au nanostructures to the round-dome shaped nanoparticles due to the limited and/or enhanced surface diffusion at various temperatures. Meanwhile, the variation of deposition amount leads to a wide range of dimensions of Au nanoparticles as a result of the size increase and the corresponding density decrease. Furthermore, based on the annealing duration control, the size of Au nanoparticles tends to be gradually increased owing to the Ostwald-ripening. Meanwhile, the effect of surface index on the size and density is also witnessed. The results are systematically analyzed by using the atomic force microscope images, energy-dispersive X-ray spectroscopy spectra and maps, Fourier filter transforms power spectra, cross-sectional line-profiles and size and density plots.

Keywords

Metallic nanoparticles Gold nanoparticles Gold nanostructures GaAs type-B substrates 

Notes

Acknowledgments

This work was supported by the National Research Foundation (NRF) of Korea (No. 2011-0030821 and 2013R1A1A1007118) and in part by the research grant of Kwangwoon University in 2015. This work reported in this paper was conducted during the sabbatical year of Kwangwoon University in 2015.

Supplementary material

13319_2015_61_MOESM1_ESM.docx (1 mb)
Supplementary material 1 (DOCX 1060 kb)

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Copyright information

© 3D Research Center, Kwangwoon University and Springer-Verlag Berlin Heidelberg 2015

Authors and Affiliations

  • Daewoo Lee
    • 1
  • Mao Sui
    • 1
  • Ming-Yu Li
    • 1
  • Puran Pandey
    • 1
  • Quanzhen Zhang
    • 1
  • Eun-Soo Kim
    • 1
  • Jihoon Lee
    • 1
    • 2
  1. 1.College of Electronics and InformationKwangwoon UniversitySeoulSouth Korea
  2. 2.Institute of Nanoscale Science and EngineeringUniversity of ArkansasFayettevilleUSA

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