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Small capacitance self-shunted MoRe–Si(W)–MoRe junctions for SQUIDs applications

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Abstract

MoRe–Si(W)–MoRe planar Josephson junctions with a hybrid barrier layer made of amorphous silicon doped with tungsten at relatively high tungsten concentrations (~ 11%) are experimentally studied. Small intrinsic (natural) capacitance and shunting by tungsten nanoclusters give an advantage to MoRe–Si(W)–MoRe junctions against traditional superconductor–insulator–superconductor (SIS) planar junctions as candidates for innovative superconducting electronics. It is shown that the use of such junctions with a Si(W) barrier layer thickness of 15–30 nm can substantially enhance the sensitivity of both RF and DC SQUIDs.

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Acknowledgements

The authors are thankful to A.A. Kordyuk and S.N. Shevchenko for stimulating discussions of the results and further work prospectives. A.Sh., and O.S. are grateful to the support of the Targeted Research & Development Initiatives Programme funded by the STCU and the National Academy of Science of Ukraine (Project No. 6250). This work was partially supported by the French–Ukrainian Partenariat Hubert Curien (PHC) DNIPRO No. 34849XH and DNIPRO No. 37984RL.

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Correspondence to A. P. Shapovalov.

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Shapovalov, A.P., Shaternik, V.E., Turutanov, O.G. et al. Small capacitance self-shunted MoRe–Si(W)–MoRe junctions for SQUIDs applications. Appl Nanosci (2020) doi:10.1007/s13204-020-01254-9

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Keywords

  • Josephson contact
  • Tunnel junction
  • Barrier doping
  • Self-shunted junction
  • DC SQUID
  • RF SQUID