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Features of changes in the electrical resistance of p-Si crystals under the action of an elastic one-axial mechanical load and a magnetic field

  • Roman LysEmail author
  • Bohdan Pavlyk
  • Roman Didyk
  • Josyp Shykorjak
  • Markiyan Kushlyk
  • Dmytro Slobodzyan
  • Ivan Karbovnyk
Original Article
  • 3 Downloads

Abstract

In thе work, changes in the surface electrical resistance of p-Si crystals were investigated under the simultaneous action of the magnetic field and elastic uniaxial deformation. It was established that a sharp decrease (leap) of resistance occurs at the moment of transition from compression to unclamping at a magnitude of a mechanical load exceeding 18 MPa. Such a leap of resistance is not observed under the elastic uniaxial deformations, which do not exceed 14 MPa. This can be explained by the fact that due to the deeper and more prolonged penetration of the dislocation loops, and the corresponding increase in their length, they accumulate a significant number of charged defects that remain unplaced at the beginning of the release (reduction of the field of mechanical stress). A fluctuation of the resistance value in the direction of increase or towards the reduction occurs in the magnetic field. The diffusion of magnetically sensitive defects into the near-surface region can be explained by the repetition of the processes described in time. In a deformed crystalline lattice, diffusion processes occur more rapidly, which increases the frequency of oscillations of the resistance value. By investigating the IR absorption spectra of experimental samples, it was shown that the decay of defects on the surface (111) of p-Si crystals occurs during a long-term action (288 h) of a constant magnetic field (B = 0.354 T). Such defects are hydrogen-containing and oxygen-containing complexes (Si–O–Si, Si–Si, Si–H2, Si–C, O–Si–O, Si–O–C, Si–CH3, H–OH, H2O, Si–OH). This leads to an increase in the surface resistance of the experimental samples of silicon.

Keywords

Silicon Magnetic field Uniaxial deformation Dislocation 

Abbreviations

IR

Infrared

R(σ)

The dependence of the electric resistance on the magnitude of the elastic mechanical deformation

Notes

Author contributions

All authors (RL, BP, RD, JSh, MK, DS, IK) developed the methodology and algorithms of experimental studies. RL and RD developed an experimental facility for the investigation of mechanically induced changes of electro conductivity of p-Si crystals. All authors read and approved the final manuscript.

Funding

The study was carried out at Department of Sensor and Semiconductor Electronics, Ivan Franko Lviv National University without additional funding.

Compliance with ethical standards

Conflict of interest

The authors declare that they have no competing interests.

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Copyright information

© King Abdulaziz City for Science and Technology 2019

Authors and Affiliations

  • Roman Lys
    • 1
    Email author
  • Bohdan Pavlyk
    • 1
  • Roman Didyk
    • 1
  • Josyp Shykorjak
    • 1
  • Markiyan Kushlyk
    • 1
  • Dmytro Slobodzyan
    • 1
  • Ivan Karbovnyk
    • 1
  1. 1.Faculty of Electronics and Computer TechnologiesIvan Franko National University of LvivLvivUkraine

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