Electroluminescence energy efficiency of Si-structures with different compound of nanoscale dislocation complexes

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Abstract

Changes in the defect structure and luminescence properties of silicon p-type crystals surface layer under the influence of plastic deformation and high temperature annealing in oxygen atmosphere were investigated. A special role of dislocations in the surface layer of silicon during the formation its energy spectrum and rebuilding the defective structure was established. It is shown that the concentration of linear defects more than 104 cm−2 enriched subsurface layer with electrically-active complexes (dislocation—oxygen, dislocation—vacancy, dislocation—interstitial atoms of silicon) that are effective radiative recombination centers. It has been demonstrated that mixed treatment of silicon crystals by plastic deformation, high temperature annealing in the flowing oxygen atmosphere and elastic deformation at the final stage increases the energy efficiency of the radiative structures.

Keywords

Silicon Dislocation-related luminescence High-temperature annealing Irradiative recombination centers in silicon Energy efficiency 

Abbreviations

LES

Light-emitting structures

DEL

Dislocation-related electroluminescence

NIR

Near infrared

BEL

Band-edge electroluminescence

Cz-Si

Silicon crystals grown by Czochralski method

EL

Electroluminescence

FOA

Flow oxygen atmosphere

FWHM

Full width at half maximum

Notes

Authors’ contribution

BP and MK initiated the research, designed the experimental strategy. MK and DS performed the treatment of silicon crystals and production of barrier and light-emitting structures. MK carried of the EL spectra’s measurements and DS performed the energy efficiency calculations. BP and DS performed the data analysis and drafted the manuscript. All authors read and approved the final manuscript.

Compliance with ethical standards

Conflict of interest

The authors declare that they have no competing interests.

References

  1. Cogan L (2011) Power infrared diodes. Electron STB 8(00114):66–73Google Scholar
  2. Degoda V Ya, Podust GP (2017) Features of the dark conductivity of zinc selenide. Semiconductors 48(3):273–280CrossRefGoogle Scholar
  3. Dolgolenko AP (2012) Electronic configurations of the levels of divacancies in silicon. Probl At Sci Technol 8(5):13–20Google Scholar
  4. Kuzmin RV, Bagraev NT, Klyachkin LE, Malyarenko AM (2015) Defect-related luminescence in silicon p +–n junctions. Semiconductors 49(9):1222–1225CrossRefGoogle Scholar
  5. Kveder V, Badylevich V, Steinman E, Izotov A, Zeibt M, Schreter W (2004) Room-temperature silicon light-emitting diodes based on dislocation luminescence. Appl Phys Lett 84(12):2106–2108CrossRefGoogle Scholar
  6. Li S, Gao Y, Fan R, Li D, Yang D (2015) Room-temperature near-infrared electroluminescence from boron-diffused silicon p-n-junction diodes. Front Mater Opt Photonics 2(8):1–4Google Scholar
  7. Lukjanitsa VV (2003) Energy levels of vacancies and interstitial atoms in the band gap of silicon. Semiconductors 37(4):404–413CrossRefGoogle Scholar
  8. Maier-Flaig F, Rinck J, Stephan M, Bocksrocker T, Bruns M, Kübel C, Powell AK, Ozin GA, Lemmer U (2013) Multicolor silicon light-emitting diodes. Nano Lett 13(2):475–480CrossRefGoogle Scholar
  9. Pavlyk BV, Kushlyk MO, Didyk RI, Shykorjak YA, Slobodzyan DP, Kulyk BY (2013) Electrophysical characteristics of near-surface layers in p-Si crystals with sputtered Al films and subjected to elastic deformation. Ukr J Phys 58(8):742–747CrossRefGoogle Scholar
  10. Pavlyk BV, Kushkyk MO, Slobodzyan DP (2015) About the nature of electroluminescence centers in plastically deformed crystals of p-type silicon. J Nano Electron Phys 7(3):030431–030435Google Scholar
  11. Pavlyk BV, Kushkyk MO, Slobodzyan DP (2017) Origin of dislocation luminescence centers and their reorganization in p-type silicon crystal subjected to plastic deformation and high temperature annealing. Nanoscale Res Lett 12(358):1–8Google Scholar
  12. Puliyankot Vidhu, Raymond JE (2012) One-dimensional physical model to predict the internal quantum efficiency of Si-based LEDs. IEEE Trans Electron Devices 59(1):26–34CrossRefGoogle Scholar
  13. Sachenko AV, Gorban AP, Kostylyov VP (2004) On the ultimate quantum efficiency of band-edge electroluminescence in silicon barrier structures. Semiconductors 38(5):550–553CrossRefGoogle Scholar
  14. Slobodzyan DP, Pavlyk BV, Kushlyk MO (2015) Features of influence of X-radiation and magnetic field on the electrical characteristics of barrier structures based on p-Si with dislocation, designed for solar energy. J Nano Electron Phys 7(4):04051-1–04051-5Google Scholar
  15. Sobolev NA, Ber BY, Emel’yanov AM, Kovarskiĭ AP, Shek EI (2007) Dislocation-related luminescence in silicon, caused by implantation of oxygen ions and subsequent annealing. Semiconductors 41(3):295–297CrossRefGoogle Scholar

Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • D. P. Slobodzyan
    • 1
  • M. O. Kushlyk
    • 1
    • 2
  • B. V. Pavlyk
    • 1
  1. 1.Department of Sensor and Semiconductor ElectronicsIvan Franko National University of LvivLvivUkraine
  2. 2.Institute of Physics, Polish Academy of SciencesWarsawPoland

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