Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface layers. In addition to typical highly defective layers in as-implanted material, a 50 nm-thick sub-surface layer with very low defect density was observed. The main defects in other layers after implantation were dislocation loops, yet after arsenic activation annealing, the dominating defects were single dislocations. Transport (from depth to surface), transformation and annihilation of radiation-induced defects were observed as a result of annealing, with the depth with the maximum defect density decreasing from 110 to 40 nm.
HgCdTe Arsenic implantation Transmission electron microscopy Nano-size defect
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Bommena R, Ketharanathan S, Wijewarnasuriya PS et al (2015) High-performance MWIR HgCdTe on Si substrate focal plane array development. J Electron Mater 44:3151–3156CrossRefGoogle Scholar
Gravrand O, Destefanis G (2013) Recent progress for HgCdTe quantum detection in France. Infr Phys Technol 59:163–171CrossRefGoogle Scholar
Izhnin II, Fitsych EI, Voitsekhovskii AV et al (2017a) Defects in arsenic–implanted p+–n and n+–p structures based on CdHgTe MBE films. Russ Phys J 60:92–97Google Scholar
Izhnin II, Voitsekhovskii AV, Кoroтaev AG et al (2017b) Optical and electrical studies of arsenic–implanted HgCdTe films grown with molecular beam epitaxy on GaAs and Si substrates. Infr Phys Technol 81:52–58CrossRefGoogle Scholar
Kerlain A, Brunner A, Sam-Giao D et al (2016) Mid-wave HgCdTe FPA based on P on N technology: hot recent developments. NETD: dark current and 1/f noise considerations. J Electron Mater 45:4557–4562CrossRefGoogle Scholar
Lobre C, Jalabert D, Vickridge I et al (2013) Quantitative damage depth profiles in arsenic implanted HgCdTe. Nuclear Instr Methods in Phys Res B 313:76–80CrossRefGoogle Scholar
Lobre C, Jouneau P-H, Mollard L et al (2014) Characterization of the microstructure of HgCdTe with p-type doping. J Electron Mater 43:2908–2914CrossRefGoogle Scholar
Mollard L, Destefanis G, Bayer N et al (2009) Planar p-on-n HgCdTe FPAs by arsenic ion implantation. J Electron Mater 38:1805–1813CrossRefGoogle Scholar
Mollard L, Destefanis G, Bourgeois G et al (2011) Status of p-on-n arsenic-implanted HgCdTe technologies. J Electron Mater 40:1830–1839CrossRefGoogle Scholar
Umeda T, Toda A, Mochizuki Y (2004) Measurement of process-induced defects in Si sub-micron devices by combination of EDMR and TEM. Eur Phys J Appl Phys 27:13–19CrossRefGoogle Scholar
Yakushev MV, Brunev DV, Varavin VS et al (2011) HgCdTe heterostructures on Si(310) substrates for MWIR infrared photodetectors. Semiconductors 45:385–391CrossRefGoogle Scholar