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Nano-size defects in arsenic-implanted HgCdTe films: a HRTEM study

  • O. Yu. Bonchyk
  • H. V. Savytskyy
  • Z. Swiatek
  • Y. Morgiel
  • I. I. Izhnin
  • A. V. Voitsekhovskii
  • A. G. Korotaev
  • K. D. Mynbaev
  • O. I. Fitsych
  • V. S. Varavin
  • S. A. Dvoretsky
  • D. V. Marin
  • M. V. Yakushev
Original Article
  • 14 Downloads

Abstract

Radiation damage and its transformation under annealing were studied with bright-field and high-resolution transmission electron microscopy for arsenic-implanted HgCdTe films with graded-gap surface layers. In addition to typical highly defective layers in as-implanted material, a 50 nm-thick sub-surface layer with very low defect density was observed. The main defects in other layers after implantation were dislocation loops, yet after arsenic activation annealing, the dominating defects were single dislocations. Transport (from depth to surface), transformation and annihilation of radiation-induced defects were observed as a result of annealing, with the depth with the maximum defect density decreasing from 110 to 40 nm.

Keywords

HgCdTe Arsenic implantation Transmission electron microscopy Nano-size defect 

Notes

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Copyright information

© Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  • O. Yu. Bonchyk
    • 1
  • H. V. Savytskyy
    • 1
  • Z. Swiatek
    • 2
  • Y. Morgiel
    • 2
  • I. I. Izhnin
    • 3
    • 4
  • A. V. Voitsekhovskii
    • 4
  • A. G. Korotaev
    • 4
  • K. D. Mynbaev
    • 5
    • 6
  • O. I. Fitsych
    • 7
  • V. S. Varavin
    • 8
  • S. A. Dvoretsky
    • 4
    • 8
  • D. V. Marin
    • 8
  • M. V. Yakushev
    • 8
  1. 1.Ya. S. Pidstryhach Institute for Applied Problems of Mechanics and Mathematics NASUL’vivUkraine
  2. 2.Institute of Metallurgy and Material Science PANKrakówPoland
  3. 3.Scientific Research Company “Carat”L’vivUkraine
  4. 4.National Research Tomsk State UniversityTomskRussia
  5. 5.Ioffe InstituteSaint PetersburgRussia
  6. 6.ITMO UniversitySaint PetersburgRussia
  7. 7.Hetman Petro Sahaidachny National Army AcademyL’vivUkraine
  8. 8.A.V. Rzhanov Institute of Semiconductor PhysicsSB RASNovosibirskRussia

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