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Indian Journal of Physics

, Volume 89, Issue 10, pp 1007–1012 | Cite as

Characterization of tin (II) sulphide thin film synthesized by successive chemical solution deposition

  • A. Mukherjee
  • P. MitraEmail author
Original paper

Abstract

In the present work, tin (II) sulphide (SnS) thin films were grown on glass substrate by successive chemical solution deposition method using ammonium sulphide as anionic precursor solutions. Characterization techniques of X-ray diffraction, scanning electron microscopy, field emission scanning electron microscopy and energy-dispersive x-ray were utilized to study the microstructure of the films. Energy-dispersive x-ray confirmed formation of nearly stoichiometric film with slight excess of tin under optimized deposition conditions. Particle size estimated from Rietveld refinement of X-ray diffraction data using MAUD software was ~41 nm which compared well with field emission scanning electron microscopy measurements. The value of the energy gap of ~1.51 eV was found to be near the optimum needs for photovoltaic solar energy conversion (1.5 eV) with high absorption in the visible region. An enhancement in energy gap was observed for tin-enriched films.

Keywords

Tin sulphide Successive chemical solution deposition Thin film Particle size Band gap 

PACS Nos.

81.15.-z 61.05.cp 81.05.Dz 

Notes

Acknowledgments

The authors wish to thank the University Grants Commission (UGC), India, for granting Centre for Advanced Study (CAS) under the thrust area “Condensed Matter Physics including Laser applications” to the Department of Physics, Burdwan University, under the assistance of which the work has been carried out.

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Copyright information

© Indian Association for the Cultivation of Science 2015

Authors and Affiliations

  1. 1.Department of PhysicsThe University of BurdwanBurdwanIndia

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