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Indian Journal of Physics

, Volume 85, Issue 4, pp 551–558 | Cite as

Structural, optical and electrical properties of tin oxide thin film deposited by APCVD method

  • P. Saikia
  • A. Borthakur
  • P. K. SaikiaEmail author
Article

Abstract

Tin oxide (SnO2) thin films have been grown on glass substrates using atmospheric pressure chemical vapour deposition (APCVD) method. During the deposition, the substrate temperature was kept at 400°C–500°C. The structural properties, surface morphology and chemical composition of the deposited film were studied by X-ray diffraction (XRD), scanning electron microscope (SEM) and Rutherford back scattering (RBS) spectrum. XRD pattern showed that the preferred orientation was (110) having tetragonal structure. The optical properties of the films were studied by measuring the transmittance, absorbance and reflectance spectra between λ = 254 nm to 1400 nm and the optical constants were calculated. Typical SnO2 film transmits ∼ 94% of visible light. The electrical properties of the films were studied using four-probe method and Hall-voltage measurement experiment. The films showed room temperature conductivity in the range 1.08 × 102 to 1.69 × 102 Ω−1cm−1.

Keywords

Tin oxde APCVD XRD RBS Optical property Electrical property 

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References

  1. [1]
    G Frank, E Kaur and H Kostlin Solar Energy Matter 8 387 (1983)ADSCrossRefGoogle Scholar
  2. [2]
    A Goetzberger and C Hebling Sol. Energy Mater. Solar Cells 62 1 (2000)CrossRefGoogle Scholar
  3. [3]
    K L Chopra, Major S and D K Pandya Thin Solid Films. 102 1 (1983)ADSCrossRefGoogle Scholar
  4. [4]
    Kim Kun-ho and Park Tong Soo J. Korean Phys. Soc. 18 124 (1985)Google Scholar
  5. [5]
    Y P Yadava, G Denicoló, A C Arias, L S Roman and I A Hümmelgen Materials Chem. Phys. 48 263 (1997)CrossRefGoogle Scholar
  6. [6]
    D Davazoglou Thin Solid Films 302 204 (1997)ADSCrossRefGoogle Scholar
  7. [7]
    K S Shamala, L C S Murthy and K Narasimha Rao Bull. Mater. Sci. 27 295 (2004)CrossRefGoogle Scholar
  8. [8]
    L I Popova, M G Michailov, V K Gueorguiev and A Shapov Thin Solid Films 186 107 (1990)ADSCrossRefGoogle Scholar
  9. [9]
    S G Ansari, S W Gosavi, S A Gangal, R K Karekar and R C Aiyer J. Mater. Sci. Mater. Electron. 8 23 (1997)CrossRefGoogle Scholar
  10. [10]
    Feng Gu, Shu Fen Wang, Meng Kai Lü, Xiu Feng Cheng, Su Wen Liu, Guang Jun Zhou, Dong Xu and Duo Rong Yuan, J. Crys. Growth 262 182 (2004)ADSCrossRefGoogle Scholar
  11. [11]
    A Ben-Shalon, L Kaplan, R L Boxman, S Goldsmith and M Nathan Thin Solid Films 236 20 (1993)ADSCrossRefGoogle Scholar
  12. [12]
    E Cetinörgü and S Goldsmith J. Phys. D: Appl. Phys. 40 5220 (2007)ADSCrossRefGoogle Scholar
  13. [13]
    J A Aboaf, V C Marcotte and N J Chou J. Electrochem. Soc. 120 701 (1973)CrossRefGoogle Scholar
  14. [14]
    I Mártil and G González Díaz Am. J. Phys. 60 83 (1992)CrossRefGoogle Scholar
  15. [15]
    J I Gittleman, E K Sichel and Y Arie Solar Energy Materials 1 93 (1979)ADSCrossRefGoogle Scholar
  16. [16]
    J I Pankove Optical Processes in Semiconductors (New York: Dover Pub. Inc.) (1971)Google Scholar
  17. [17]
    S Chaliha, M N Borah, P C Sarmah and A Rahman Indian J. Phys. 82 303 (2008)Google Scholar

Copyright information

© Indian Association for the Cultivation of Science 2011

Authors and Affiliations

  1. 1.Thin Film LaboratoryDibrugarh UniversityDibrugarhIndia
  2. 2.Department of PhysicsTezpur UniversityTezpurIndia

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