Indian Journal of Physics

, Volume 84, Issue 10, pp 1399–1404 | Cite as

Observation of grain growth in swift heavy ion irradiated NiO thin films

  • P. Mallick
  • Chandana Rath
  • J. K. Dash
  • R. Biswal
  • D. C. Agarwal
  • D. Behera
  • D. K. Avasthi
  • D. Kanjilal
  • P. V. Satyam
  • N. C. Mishra
Article
First Online:

Abstract

NiO thin films grown on Si(100) substrates by electron beam evaporation, were sintered at 500 °C and 700 °C. The films were irradiated with 120 MeV Au9+ ions. Irradiation had different effects depending upon the initial microstructure of the films. Irradiation of the films at a fluence of 3 × 1011 ions cm−2 leads to grain growth for the films sintered at 500 °C and grain fragmentation for the films sintered at 700 °C. At still higher fluences of irradiation, grain size in 500 °C sintered film decreased, but the same improved in 700 °C sintered film. Associated with the grain size, texturing of the films was also shown to undergo significant modifications under irradiation.

Keywords

Ion Irradiation nanoparticles electronic excitation grain growth texturing NiO 
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Copyright information

© Indian Association for the Cultivation of Science 2010

Authors and Affiliations

  • P. Mallick
    • 1
  • Chandana Rath
    • 2
  • J. K. Dash
    • 3
  • R. Biswal
    • 4
  • D. C. Agarwal
    • 5
  • D. Behera
    • 6
  • D. K. Avasthi
    • 5
  • D. Kanjilal
    • 5
  • P. V. Satyam
    • 3
  • N. C. Mishra
    • 4
  1. 1.Department of PhysicsNorth Orissa UniversityBaripadaIndia
  2. 2.School of Material Science & Technology, Institute of TechnologyBanaras Hindu UniversityVaranasiIndia
  3. 3.Institute of PhysicsBhubaneswarIndia
  4. 4.Department of PhysicsUtkal UniversityBhubaneswarIndia
  5. 5.Inter-University Accelerator CenterNew DelhiIndia
  6. 6.Department of PhysicsNational Institute of TechnologyRourkelaIndia

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