Magnetic properties of co-doped SnO2 diluted magnetic semiconductors
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Abstract
Polycrystalline samples of Sn1−xCoxO2 are prepared for x=0.02, 0.05 and 0.10. They all exhibit room temperature ferromagnetism with decrease in saturation magnetization with increase in doping. The magnetization data recorded at 85 K, 295 K and 400 K for x ≥ 0.05 could be analyzed in terms of bound magnetic polaron model and the typical polaron concentration at room temperature is found to be in the order of 1021 per m−3.
Keywords
Polycrystalline diluted magnetic semiconductor ferromagnetism bound magnetic polaronPreview
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- [1]Y Matsumoto, M Murakami, T Shono, T Hasegawa, T Fukumura, M Kawasaki, P Ahmet, T Chikyow, S Koshihara and H Koinuma Science 291 854 (2001)CrossRefADSGoogle Scholar
- [2]J Y Kim, J H Park, B G Park, H J Noh, S J Oh, J S Yang, D H Kim, S D Bu, T W Noh, H J Lin, H H Hsieh and C T Chen Phys. Rev. Lett. 90 017401 (2003)CrossRefADSGoogle Scholar
- [3]Z Wang, W Wang, J Tang, L Tung, L Spinu and W Zhou Appl. Phys. Lett. 83 518 (2003)CrossRefADSGoogle Scholar
- [4]T Dietl, H Ohno, F Matsukura, J Cibert and D Ferrand Science 287 1019 (2000)CrossRefADSGoogle Scholar
- [5]S W Jung, S J An, G C Yi, C U Jung, S I Lee and S Cho Appl. Phys. Lett. 80 4561 (2002)CrossRefADSGoogle Scholar
- [6]P Sharma, A Gupta, F J Owens, A Inoue and K V Rao J. Mag. Magn. Mat. 282 115 (2004)CrossRefADSGoogle Scholar
- [7]K P Bhatti, S Chaudhary, D K Pandya and S C Kashyap Solid State Commun. 136 384 (2005)ADSGoogle Scholar
- [8]N Theodoropoulou, V Misra, J Philip, P LeClair, G P Bereraa, J S Mooderaa, B Satpati and T Som J. Mag. Magn. Mat. 300 407 (2006)CrossRefADSGoogle Scholar
- [9]S B Ogale, R J Choudhary, J P Buban, S E Lofland, S R Shinde, S N Kale, V N Kulkarni, J Higgins, C Lanci, J R Simpson, N D Browning, S D Sarma, H D Drew, R L Greene and T Venkatesan Phys. Rev. Lett. 91 077205 (2003)CrossRefADSGoogle Scholar
- [10]A Punnoose, J Hays, V Gopal and V Shutthanandan Appl. Phys. Lett. 85 1559 (2004)CrossRefADSGoogle Scholar
- [11]T Fukumura, Z. Jin, M. Kawasaki, T Shono, T Hasegawa, S Koshihara and H Koinuma Appl. Phys. Lett. 78 958 (2001)CrossRefADSGoogle Scholar
- [12]S W Yoon, S B Cho, S C We, S Yoon, B J Suh, H K Song and Y J Shin, J. Appl. Phys. 93 7879 (2003).CrossRefADSGoogle Scholar
- [13]S Kolesnik and B Dabrowski J. Appl. Phys. 96 5379 (2004).CrossRefADSGoogle Scholar
- [14]A B Mahmoud, H J von Bardeleben, J L Cantin, E Chikoidze and A Mauger J. Appl. Phys. 101 013902 (2007).CrossRefADSGoogle Scholar
- [15]A S Risbud, N. A. Spaldin, Z Q Chen, S Stemmer and R Seshadri Phys. Rev. B68 205202 (2003)ADSGoogle Scholar
- [16]C M Liu, X T Zu and W L Zhou J. Phys. Condens. Matt. 18 6001 (2006)CrossRefADSGoogle Scholar
- [17]K Gopinadhan, S C Kashyap, D K Pandya and S Chaudhary J. Phys. Condens. Matt. 20 125208 (2008)CrossRefADSGoogle Scholar
- [18]L B Duan, G H Rao, J Yu, Y C Wang, G Y Liu and J K Liang J. Appl. Phys. 101 063917 (2007)CrossRefADSGoogle Scholar
- [19]G H McCabe, T Fries, M T Liu, Y Shapira, L R Ram-Mohan, R Kershaw, A. Wold, C Fau, M Averous and E J McNiff Jr., Phys. Rev. B 56 6673 (1997)ADSGoogle Scholar
- [20]E Quintero, R Tovar, M Quintero, J Gonzalez, J M Broto, H. Rakoto, R Barbaste, J C Woolley, G. Lamarche and A M Lamarche J. Mag. Magn. Mat. 210 208 (2000).CrossRefADSGoogle Scholar
- [21]C Chiorescu, J L Cohin and J J Neumeier Phys. Rev. B76 020404 (R) (2007)ADSGoogle Scholar
- [22]E Quintero, M Quintero, M Morocoima, G E Delgado, L Lara, J Gomez and P Bocaranda Rev. Mex. Fis S53 163 (2007)Google Scholar
- [23]S K Srivastava, M Kar, S Ravi, P K Mishra and P D Babu J. Mag. Magn. Mat. 320 2382 (2008)CrossRefADSGoogle Scholar
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