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Performance Evaluation of Transition Metal Dichalcogenides Based Steep Subthreshold Slope Tunnel Field Effect Transistor

  • Prateek Kumar
  • Maneesha GuptaEmail author
  • Kunwar Singh
Original Paper


In this paper, Transition Metal Dichalcogenides (TMDC) material based Tunnel Field Effect Transistor (TFET) has been studied by including coverage of a wide range of characteristics. Different analog/RF and linearity properties of TMDC materials Molybdenum disulfide (MoS2), Molybdenum Diselenide (MoSe2), Molybdenum Ditelluride (MoTe2), Tungsten disulfide (WS2) and Tungsten Diselenide (WSe2) have been analyzed. Developed device is compared with different previously proposed devices and much better characteristics are observed. Device structure used for simulation exhibit steep threshold slope. The lowest value of slope observed is 16.11 mV/dec for MoS2 and the highest value is obtained for MoSe2 as 21.6 mV/dec. Highest ION/IOFF ratio is obtained for MoS2(≈1013). TMDC materials exhibit properties which make them promising candidates to replace Silicon in the future.


Analog parameters Two dimensional materials Distortion Linearity TFET 


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Copyright information

© Springer Nature B.V. 2019

Authors and Affiliations

  1. 1.Electronics Research Laboratory, Department of Electronics and communicationFaculty of Technology, University of DelhiNew DelhiIndia
  2. 2.Electronics Research Laboratory, Department of Electronics and communicationNetaji Subhas University of Technology (formerly NSIT)New DelhiIndia

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