Performance Evaluation of Transition Metal Dichalcogenides Based Steep Subthreshold Slope Tunnel Field Effect Transistor
- 30 Downloads
In this paper, Transition Metal Dichalcogenides (TMDC) material based Tunnel Field Effect Transistor (TFET) has been studied by including coverage of a wide range of characteristics. Different analog/RF and linearity properties of TMDC materials Molybdenum disulfide (MoS2), Molybdenum Diselenide (MoSe2), Molybdenum Ditelluride (MoTe2), Tungsten disulfide (WS2) and Tungsten Diselenide (WSe2) have been analyzed. Developed device is compared with different previously proposed devices and much better characteristics are observed. Device structure used for simulation exhibit steep threshold slope. The lowest value of slope observed is 16.11 mV/dec for MoS2 and the highest value is obtained for MoSe2 as 21.6 mV/dec. Highest ION/IOFF ratio is obtained for MoS2(≈1013). TMDC materials exhibit properties which make them promising candidates to replace Silicon in the future.
KeywordsAnalog parameters Two dimensional materials Distortion Linearity TFET
Unable to display preview. Download preview PDF.
- 7.Rawat A, Jena N, Dimple, De Sarkar A (2018) A comprehensive study in carrier mobility and artificial photosynthetic properties in Group VI transition metal dichalogenide monolayer. Journal of Materials ChemistryGoogle Scholar
- 8.Jin Z, Li X (2014) Jeffrey T. Mullen and Ki Wook Kim, Intrinsic Transport Properties of Electrons and Holes in Monolayer Transition Metal Dichalcogenides. Physical Review B, Cornell University Press 90Google Scholar
- 9.Neupane MR (2015) Electronic and vibrational properties of 2D materials from monolayer to bulk. IEEE International Workshop on Computational Electronics Google Scholar
- 13.Zhao Y-H, Yang F, Wang J, Guo H, Ji W (2015) Continuously tunable electronic structure of transition metal dichalocgenides. Superlattices 5:8356Google Scholar
- 18.Peng Wu, Tarak Ameen, Huairuo Zhang, Leonid A. Bendersky, Hesameddin Llatikhameneh, Gerhard Klimeck, Rajib Rahman, Albert V. Davvydov and Joerg Appenzeller,” Complementry Black Phosphorous Tunneling Field-Effect transistors” ACS NANO, 2018. Supplementry file : https://pubs.acs.org/doi/suppl/10.1021/acsnano.8b06441
- 20.Cao J, Park J, Triozon F, Pala MG, Cresti A (2018) Simulation of 2D material-based tunnel field-effect transistors: planar vs. vertical architectures. ISTE Open Science 1Google Scholar
- 23.Rahman E, Shadman A, Ahmed I, Khan SUZ, Khosru QDM (2018) A physically based compact I-V model for monolayer TMDC channel MOSFET and DMFET biosensor. Nanotechnology, IOP publishingGoogle Scholar
- 26.A. R. Trivedi, S. Carlo and S. Mukhopadhyay, “Exploring tunnel-FET for ultra low power analog applications: a case study on operational transconductance amplifier,” in Proceedings of the 50th Annual Design Automation Conference, p. 109, IEEE, 2013Google Scholar
- 27.Chaujar R, Kaur R, Saxena M, Gupta M, Gupta RS (2009) TCAD assessment of Gate Electrode Workfunction Engineered Recessed Channel (GEWE-RC) MOSFET and its multi-layered gate architecture, Part II: Analog and large signal performance evaluation. Superlattice Microst 46(4):645–655CrossRefGoogle Scholar