One of the basic components of smart power integrated circuits (SPICs) is the laterally diffused metal oxide semiconductor (LDMOS) transistors. In this paper, we propose Fin-LDMOS transistor based on the surface potential. In order to improve the accuracy, we have taken into account not only the fin-shape structure of the gate but also the mobility reduction and saturation velocity. The proposed method is evaluated considering a broad range of biases and physical parameters of the device. The comparison between modeling results and 3D simulations confirm the remarkable accuracy of our model.
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Pak, A., Orouji, A.A. Compact Modeling of Fin-LDMOS Transistor Based on the Surface Potential. Silicon 12, 239–244 (2020). https://doi.org/10.1007/s12633-019-00118-4
- Channel current
- Drift region current
- Surface potential