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Compact Modeling of Fin-LDMOS Transistor Based on the Surface Potential

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Abstract

One of the basic components of smart power integrated circuits (SPICs) is the laterally diffused metal oxide semiconductor (LDMOS) transistors. In this paper, we propose Fin-LDMOS transistor based on the surface potential. In order to improve the accuracy, we have taken into account not only the fin-shape structure of the gate but also the mobility reduction and saturation velocity. The proposed method is evaluated considering a broad range of biases and physical parameters of the device. The comparison between modeling results and 3D simulations confirm the remarkable accuracy of our model.

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Correspondence to Ali A. Orouji.

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Pak, A., Orouji, A.A. Compact Modeling of Fin-LDMOS Transistor Based on the Surface Potential. Silicon 12, 239–244 (2020). https://doi.org/10.1007/s12633-019-00118-4

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Keywords

  • Fin-LDMOS
  • Modeling
  • Channel current
  • Drift region current
  • Surface potential