Nano-Texturing of Silicon Wafers Via One-Step Copper-Assisted Chemical Etching
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Nano-texturing of a silicon surface has been achieved via one-step copper-assisted chemical etching (CACE), which offers a simple approach for large-scale production of inverted pyramid textured silicon surfaces. The effects of H2O2 concentration, etching time and reaction temperature on the inverted pyramid-like structure and anti-reflective ability were systematically investigated. The results show that the lowest average reflectivity (4.3%) in the wavelength range of 300~1000 nm was obtained under the optimum conditions of 0.06 mol/L copper nitrate, 3 mol/L H2O2 concentration and 2 mol/L hydrofluoric acid (HF) at 60 °C for 5 min. The formation mechanism of the inverted pyramid structure is discussed and can be attributed to the moderate catalytic activity of nanocopper particles that induce etching preferentially along the non-<111 > directions of the silicon. The inverted pyramid structures, with the excellent anti-reflectivity, have potential application in the fabrication of solar cells compatible with the semiconducting industry.
KeywordsCopper-assisted chemical etching Nano-texturing Silicon wafers Anti-reflection properties
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Financial support of this work from the National Natural Science Foundation of China (Grant No. 61764009, 51764028, 51762043), Key Project of Yunnan Province Natural Science Fund (2018FA027), Yunnan Youth Fund Project (2016FD037) and the Program for Innovative Research Team in University of Ministry of Education of China (No. IRT_17R48).
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