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, Volume 11, Issue 2, pp 973–981 | Cite as

TFET on Selective Buried Oxide (SELBOX) Substrate with Improved ION/IOFF Ratio and Reduced Ambipolar Current

  • Dhruvajyoti BarahEmail author
  • Ashish Kumar Singh
  • Brinda Bhowmick
Original Paper

Abstract

This paper proposes a new structure for tunnel field effect transistor on a selective buried oxide (SELBOX) substrate. An extensive simulation study and a comparative performance analysis of the key characteristics of the proposed geometry of TFET on SELBOX substrate and the conventional fully depleted silicon-on-insulator (FDSOI) TFETs have been done. It has been found that SELBOX can significantly reduce the OFF current, without affecting the ON current of the device; hence, higher order of ION/IOFF ratio (1010) can be obtained prevailing the advantages of FDSOI TEFTs.

Keywords

Leakage current Silicon on insulator (SOI) Selective buried oxide (SELBOX) Subthreshold swing Tunnel field effect transistor (TFET) Band to band tunneling (BTBT) 

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Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  1. 1.Department of Electronics and Communication EngineeringNational Institute of TechnologySilcharIndia

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