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, Volume 11, Issue 2, pp 919–924 | Cite as

Pressure Dependence of Mechanical Properties in AlP and AlSb Semiconductors

  • E. B. ElkenanyEmail author
  • A. R. Degheidy
  • O. A. Alfrnwani
Original Paper
  • 42 Downloads

Abstract

The effect of pressure on the mechanical properties of zinc-blende AlP and AlSb semiconductors has been investigated using the local empirical pseudo-potential method (EPM). The studied quantities are the elastic constants(cij), bulk modulus (Bu), shear modulus (Sh),Young modulus (Y0), Poisson’s ratio (σ, bond stretching (α, bond binding force (β, internal strain parameter (ζ, linear compressibility (C0) and Cauchy ratio (Ca). All studied quantities are found to be affected with pressure except the internal strain parameter and Poisson’s ratio. The mechanical stability criteria for the materials of interest for pressure up to 120 Kbar are fulfilled. The considered materials can be used in optoelectronic devices. The overall agreement between our results and the available experimental and theoretical data is found to be reasonable good. Our calculated values may serve as a reference, especially for high pressure.

Keywords

Pressure Mechanical properties AlP and AlSb semiconductors 

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Copyright information

© Springer Science+Business Media B.V., part of Springer Nature 2018

Authors and Affiliations

  • E. B. Elkenany
    • 1
    Email author
  • A. R. Degheidy
    • 1
  • O. A. Alfrnwani
    • 1
  1. 1.Department of Physics, Faculty of ScienceMansoura UniversityMansouraEgypt

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