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Determination of the Junction Recombination Velocity Initiating the Short Circuit Situation Sfsc of a Bifacial Silicon Solar Cell Irradiated Under Magnetic Field in Dynamic Frequency Regime

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Abstract

The object of this work, a study of the junction recombination velocity limiting the short circuit (Sfsc) of a silicon solar cell under magnetic field in the dynamic frequency regime is presented. From the continuity equation, the density of minority Charge carrier’s in the base and the photocurrent are determined. The study of this photocurrent, according to the junction recombination velocity, allows us to determine the junction recombination velocity limiting the short circuit. The photocurrent density is studied as a function of the junction recombination velocity for different modulation frequencies. From the variation profile of the photocurrent density as a function of the junction recombination velocity, a technique for determining junction recombination velocity initiating the short-circuit situation is presented.

Keywords

Junction recombination velocity Photocurrent Bifacial silicon solar cell Short-circuit 
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© Springer Science+Business Media B.V. 2017

Authors and Affiliations

  1. 1.Electric and Electronic Engineering DepartmentIğdır UniversityIğdırTurkey

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