Silicon

, Volume 10, Issue 2, pp 403–411 | Cite as

A Self-Powered Heterojunction Photodetector Based on a PbS Nanostructure Grown on Porous Silicon Substrate

  • Z. A. Bashkany
  • Ismail Khalaf Abbas
  • M. A. Mahdi
  • H. F. Al-Taay
  • P. Jennings
Original Paper
First Online:
Received:
Accepted:

Abstract

A photosensor was fabricated based on a lead sulfide (PbS)/porous silicon (Ps) heterojunction. An n-type Si(100) single crystal wafer was used to prepare the Ps using a photo-electrochemical etching method. A PbS nanocrystalline thin film was deposited onto the Ps substrate using a microwave-assisted chemical bath deposition (MA-CBD) technique. The current-voltage (I-V) characteristics of the fabricated PbS/Ps photosensor were studied under dark, 10 mW/cm2, 20 mW/cm2, and 40 mW/cm2 illumination by light. The device shows good response to light even without a bias voltage and the sensitivity when the applied voltage is 0 V decreased from 5.66 × 104 % under 10 mW/cm2 to 1.8 × 103 % when the device is illuminated by 40 mW/cm2 intensity light. The fabricated PbS/Ps photdetector shows a faster response to light of 0.43 sec when the applied voltage and intensity of light were 1.0 V and 40 mW/cm2, respectively. Moreover, the fastest fall time was 0.4 sec obtained for the device that was exposed to 40 mW/cm2 light and biased by 0.75 V.

Keywords

Photosensor Porous silicon PbS Nanotechnology 
This is a preview of subscription content, log in to check access.

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Brus L (1986) Electronic wave functions in semiconductor clusters: experiment and theory. J Phys Chem 90:2555–2560CrossRefGoogle Scholar
  2. 2.
    Henglein A (1989) Small-particle research: physicochemical properties of extremely small colloidal metal and semiconductor particles. Chem Rev 89:1861–1873CrossRefGoogle Scholar
  3. 3.
    Wang Y, Herron N (1991) Nanometer-sized semiconductor clusters: materials synthesis, quantum size effects, and photophysical properties. J Phys Chem 95:525–532CrossRefGoogle Scholar
  4. 4.
    Weller H (1993) Colloidal semiconductor Q-particles: chemistry in the transition region between solid state and molecules. Angew Chem Int Ed Engl 32:41–53CrossRefGoogle Scholar
  5. 5.
    Mahdi MA, Hassan JJ, Hassan Z, Ng SS (2012) Growth and characterization of ZnxCd1 xS nanoflowers by microwave-assisted chemical bath deposition. J Alloys Compd 541:227– 233CrossRefGoogle Scholar
  6. 6.
    Xia Y, Mokaya R (2004) Synthesis of ordered mesoporous carbon and nitrogen-doped carbon materials with graphitic pore walls via a simple chemical vapor deposition method. Adv Mater 16:1553–1558CrossRefGoogle Scholar
  7. 7.
    Rao C, Deepak FL, Gundiah G, Govindaraj A (2003) Inorganic nanowires. Prog Solid State Chem 31:5–147CrossRefGoogle Scholar
  8. 8.
    Al-Taay HF, Mahdi MA, Parlevliet D, Hassan Z, Jennings P (2014) Growth and characterization of silicon nanowires catalyzed by Zn metal via pulsed plasma- enhanced chemical vapor deposition. Superlattice Microst 68:90–100CrossRefGoogle Scholar
  9. 9.
    Liu X, Zhang M (2000) Studies on PBS and PBSE detectors for IR system. Int J Infrared Millimeter Waves 21:1697–1701CrossRefGoogle Scholar
  10. 10.
    Patil R, Pathan H, Gujar T, Lokhande C (2006) Characterization of chemically deposited nanocrystalline PbS thin films. J Mater Sci 41:5723–5725CrossRefGoogle Scholar
  11. 11.
    Canham L (1990) Silicon quantum wire array fabrication by electrochemical and chemical dissolution of wafers. Appl Phys Lett 57:1046–1048CrossRefGoogle Scholar
  12. 12.
    Koshida N, Koyama H (1992) Visible electroluminescence from porous silicon. Appl Phys Lett 60:347–349CrossRefGoogle Scholar
  13. 13.
    Lee M.-K., Chu C.-H., Wang Y.-H., Sze S (2001) 1.55- μm and infrared-band photoresponsivity of a Schottky barrier porous silicon photodetector. Opt Lett 26:160–162CrossRefGoogle Scholar
  14. 14.
    Fauchet P, Von Behren J, Hirschman K, Tsybeskov L, Duttagupta S (1998) Porous silicon physics and device applications: a status report. Phys Status Solidi (A) 165:3–13CrossRefGoogle Scholar
  15. 15.
    Herino R, Bomchil G, Barla K, Bertrand C, Ginoux J (1987) Porosity and pore size distributions of porous silicon layers. J Electrochem Soc 134:1994–2000CrossRefGoogle Scholar
  16. 16.
    Lopez HA (2001) Porous silicon nanocomposites for optoelectronic and telecommunication applications in University of RochesterGoogle Scholar
  17. 17.
    Hadi H, Ismail R, Habubi N (2014) Optoelectronic properties of porous silicon heterojunction photodetector. Indian J Phys 88:59–63CrossRefGoogle Scholar
  18. 18.
    Martin P, Netterfield R, Sainty W (1982) Spectrally selective PbS films produced by ion beam sputtering. Thin Solid Films 87:203–206CrossRefGoogle Scholar
  19. 19.
    Hines MA, Scholes GD (2003) Colloidal PbS nanocrystals with size-tunable near-infrared emission: observation of post-synthesis self-narrowing of the particle size distribution. Adv Mater 15:1844–1849CrossRefGoogle Scholar
  20. 20.
    Chen Q, Zhou G, Zhu J, Fan C, Li X-G, Zhang Y (1996) Ultraviolet light emission from porous silicon hydrothermally prepared. Phys Lett A 224:133–136CrossRefGoogle Scholar
  21. 21.
    Yakovtseva V, Vorozov N, Dolgyi L, Levchenko V, Postnova L, Balucani M, Bondarenko V, Lamedica G, Ferrara V, Ferrari A (2000) Porous silicon: a buffer layer for PbS heteroepitaxy. Physica Status Solidi Applid Research 182:195–200CrossRefGoogle Scholar
  22. 22.
    Zogg H, Blunier S, Fach A, Maissen C, Müller P., Teodoropol S, Meyer V, Kostorz G, Dommann A, Richmond T (1994) Thermal-mismatch-strain relaxation in epitaxial CaF 2, BaF 2/CaF 2, and PbSe/BaF 2/CaF 2 layers on Si (111) after many temperature cycles. Phys Rev B 50:10801–10810CrossRefGoogle Scholar
  23. 23.
    Wada M, Seko M, Sekiguchi Y, Iwaoka H (1993) Avalanche photodiode with AliNAsP cap layer, in Google PatentsGoogle Scholar
  24. 24.
    Borisenko V, Filonov A, Gaponenko S, Gurin V (1999) Physics, chemistry and application of nanostructures, World ScientificGoogle Scholar
  25. 25.
    Raiko V, Spitzl R, Engemann J, Borisenko V, Bondarenko V (1996) MPCVD Diamond deposition on porous silicon pretreated with the bias method. Diam Relat Mater 5:1063–1069CrossRefGoogle Scholar
  26. 26.
    Belyakov L, Zakharova I, Zubkova T, Musikhin S, Rykov S (1997) Study of PbTe photodiodes on a buffer sublayer of porous silicon. Semiconductors 31:76–77CrossRefGoogle Scholar
  27. 27.
    Luryi S, Suhir E (1986) New approach to the high quality epitaxial growth of lattice-mismatched materials. Appl Phys Lett 49:140–142CrossRefGoogle Scholar
  28. 28.
    Gao F, Lu Q, Liu X, Yan Y, Zhao D (2001) Controlled synthesis of semiconductor PbS nanocrystals and nanowires inside mesoporous silica SBA-15 phase. Nano Lett 1:743–748CrossRefGoogle Scholar
  29. 29.
    Cullity B (1972) Elements of X-Ray Diffraction. Addison-Wesley, Reading USAGoogle Scholar
  30. 30.
    Mahdi MA, Hassan, Kasim SJ, Ng SS, Hassan Z (2014) Solvothermal growth of single-crystal CdS nanowires. Bull Mater Sci 37:337–345CrossRefGoogle Scholar
  31. 31.
    Gertman R, Osherov A, Golanb Y, Fisher IV (2014) Chemical bath deposited PbS thin films on ZnO nanowires for photovoltaic applications. Thin Solid Films 550:149–155CrossRefGoogle Scholar
  32. 32.
    Valenzuela-Jauregui JJ, Ramirez-Bon R, Mendoza-Galvan A, Sotelo-Lerma M (2003) Properties of PbS thin films chemically deposited at different Temperatures. Thin Solid Films 441:104–110CrossRefGoogle Scholar
  33. 33.
    Kumar V, Sharma SK, Sharma TP, Singh V (1999) Band gap determination in thick lms from reflectance measurements. Opt Mater 12:115–115CrossRefGoogle Scholar
  34. 34.
    Obaid A, Mahdi M, Hassan Z, Bououdina M (2012) Characterization of nanocrystalline PbS thin films prepared using microwave-assisted chemical bath deposition. Mater Sci Semicond Process 15:564–571CrossRefGoogle Scholar
  35. 35.
    Naderi N, Hashim M (2012) Effect of surface morphology on electrical properties of electrochemically-etched porous silicon photodetectors. Int J Electrochem Sci 7:11512–11515Google Scholar
  36. 36.
    Rossi AM, Bohn HG (2005) Photodetectors from porous silicon. Physica Status Solidi (A):1644–1647Google Scholar
  37. 37.
    Rajabi M, Dariani RS, Iraji Zad A (2012) UV Photodetection of laterally connected ZnO rods grown on porous silicon substrate. Sensors Actuators A 180:11–14CrossRefGoogle Scholar
  38. 38.
    Mahdi MA, Hassan JJ, Ahmed NM, Ng SS, Hassan Z (2013) Growth and characterization of CdS single-crystalline micro-rod photodetector. Superlattice Microst 54:137–145CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2016

Authors and Affiliations

  • Z. A. Bashkany
    • 1
  • Ismail Khalaf Abbas
    • 1
  • M. A. Mahdi
    • 2
  • H. F. Al-Taay
    • 3
  • P. Jennings
    • 4
  1. 1.Physics Department, College of ScienceMosul UniversityMosulIraq
  2. 2.Basrah Nanomaterials Research Group (BNRG), Department of Physics, College of ScienceUniversity of BasrahBasrahIraq
  3. 3.Department of Physics, College of Science for WomenUniversity of BaghdadBaghdadIraq
  4. 4.School of Engineering and Information TechnologyMurdoch UniversityMurdochAustralia

Personalised recommendations