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, Volume 9, Issue 5, pp 689–693 | Cite as

Circularly Polarized Emission from Ensembles of InGaAs/GaAs Quantum Rings

  • R. NaouariEmail author
  • W. Ouerghi
  • F. Bernardot
  • C. Testelin
  • M. A. Maaref
  • J. Martinez-Pastor
  • D. Granados
  • J. M. Garcia
Original Paper
  • 126 Downloads

Abstract

Magneto-photoluminescence spectroscopy measurements were performed on self-assembled InGaAs/GaAs quantum rings. We report exciton exchange energy as a function of interband emission energy; we measure a decrease from 163 μ e V to 43 μ e V in the range of 1.30 eV to 1.40 eV. This result is remarkable and compatible with the exciton exchange energy in self-assembled InAs/GaAs quantum dots. Our results reveal the high value of exciton exchange albeit the quantum rings shape. We show that the exciton energy is sensitive to a magnetic field.

Keywords

Quantum rings Circular polarization Exchange splitting Diamagnetic shift 

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References

  1. 1.
    Bayer M, Stern O, Hawrylak P, Fafard S, Forchel A (2000) Nature (London) 405:923CrossRefGoogle Scholar
  2. 2.
    Warburton RJ, Miller BT, Durr CS, Bdefeld C, Karrai K, Kotthaus JP, Medeiros-Ribeiro G, Petroff PM, Huant S (1998) Phys Rev B 58:16221CrossRefGoogle Scholar
  3. 3.
    Bayer M, Ortner G, Stern O, Kuther A, Gorbunov AA, Forchel A, Hawrylak P, Fafard S, Hinzer K, Reinecke TL, Walck SN, Reithmaier JP, Klopf F, Schaifer F (2002) Phys Rev B 65:195315. and reference thereinCrossRefGoogle Scholar
  4. 4.
    Seguin R, Schliwa A, Rodt S, Potschke K, Pohl UW, Bimberg D (2005) Phys Rev Lett 95:257402CrossRefGoogle Scholar
  5. 5.
    Bester G, Wu X, Vanderbilt D, Zunger A (2006) Phys Rev Lett 96:187602CrossRefGoogle Scholar
  6. 6.
    Testelin C, Aubry E, Chaouache M, Maaref M, Benardot F, Chamaro M, Gérard J-M, Ferreira R (2006) Phys Status Solid 3:3900. 4 (2007) 1385CrossRefGoogle Scholar
  7. 7.
    Loss D, DiVincenzo DP (1998) Phys Rev A 57:120CrossRefGoogle Scholar
  8. 8.
    Benson O, Santori C, Pelton M, Yamamoto Y (2000) Phys Rev Lett 84:2513CrossRefGoogle Scholar
  9. 9.
    Garcia JM, Medeiros-Ribeiro G, Schmidt K, Ngo T, Feng JL, Lorke A, Kotthaus J, Petroff PM (1997) Appl Phys Lett 71 :2014CrossRefGoogle Scholar
  10. 10.
    Granados D, Garcia JM (2003) Appl Phys Lett 82:2401CrossRefGoogle Scholar
  11. 11.
    Naouari R, Ouerghui W, Martinez-Pastor J, Gomis J, Mareef MA, Gradanos D, Garcia JM (2012) J Modern Phys 3:471–475CrossRefGoogle Scholar
  12. 12.
    Naouari R, Ouerghui W, Martinez-Pastor J, Gomis J, Mareef MA, Gradanos D, Garcia JM (2011) J Modern Phys 2:714–718CrossRefGoogle Scholar
  13. 13.
    Warburton RJ, Schaflein C, Haft D, Bickel F, Lorke A, Karrai K, Garcia JM, Schoenfeld W, Petroff PM (2000) Nature (London) 405:926CrossRefGoogle Scholar
  14. 14.
    Haft D, Schulhauser C, Govorov AO, Warburton RJ, Karrai K, Garcia JM, Schoenfeld W, Petroff PM (2002) Physica E 13:165CrossRefGoogle Scholar
  15. 15.
    Kleemans NAJM, Blokland JH, Taboada AG, van Genuchten HCM, Bozkurt M, Fomin VM, Gladilin VN, Granados D, Garcia JM, Christianen PCM, Maan JC, Devreese JT, Koenaraad PM (2009) Phys. Rev. B 80:155318CrossRefGoogle Scholar
  16. 16.
    Sancho S, Chaouache M, Maaref MA, Bernardot F, Eble B, Lemaitre A, Testelin C (2011) Phys Rev B 84:155458CrossRefGoogle Scholar
  17. 17.
    Sahli A, Melliti A, Sellami N, Maaref MA, Testelin C, Lemaitre A, Voisin P (2008) Mater Sci Eng C 28:869CrossRefGoogle Scholar
  18. 18.
    Dotor ML, Recio, Golmayo D, Briones F (1992) J Appl Phys 72:5861CrossRefGoogle Scholar
  19. 19.
    Garcia J, Mederios Riberio GG, Schmidt K et al (1997) Appl Phys Lett 71:2014CrossRefGoogle Scholar
  20. 20.
    Suarez F, Granados D, Dotor ML (2004) J M Garcia Nanotechnology 15:S126CrossRefGoogle Scholar
  21. 21.
    Ivchenko EL (1995) Pure Appl Chem 67:463CrossRefGoogle Scholar
  22. 22.
    Dzhioev RI, Ivchenko HL, Gibbs HM, Khitrova G, Korenev VL, Tkachuk MN, Zakharchenya BP (1997) Phys Rev B 56:13405CrossRefGoogle Scholar
  23. 23.
    Paillard M, Marie X, Renucci P, Amand T, Jbeli A, Gérard JM (2001) Phys Rev Lett 86:1634CrossRefGoogle Scholar
  24. 24.
    Lombez L, Renucci P, Braun PF, Carrère H, Marie X, Amand T, Urbaszek B, Gauffier JL, Gallo P, Camps T, Arnoult A, Fontaine C, Deranlot C, Mattana R, Jaffrès H, George JM, Binh PH (2007) App Phys Lett 90:081111CrossRefGoogle Scholar
  25. 25.
    Gotoh H et al (1998) Appl Phys Lett 72:1341CrossRefGoogle Scholar
  26. 26.
    Braun PF, Marie X, Lombez L, Urbaszek B, Amand T, Renucci P, Kalevich VK, Kavokin KV, Krebs O, Voisin P, Masumoto Y (2005) Phys Rev Lett 94:116601CrossRefGoogle Scholar
  27. 27.
    Desfonds P, Eble B, Fras F, Testelin C, Bernardot F, Chamarro M, Urbaszek B, Amand T, Marie X, Gérard J-M, Thierry-Mieg V, Miard A, Lemaitre A (2010) Appl Phys Lett 96:172108CrossRefGoogle Scholar
  28. 28.
    Nakaoka T et al (2004) Phys Rev B 70:235337CrossRefGoogle Scholar
  29. 29.
    Van Vleck JH (1932) The Theory of Electric and Magnetic Susceptibilities. Oxford, New YorkGoogle Scholar
  30. 30.
    Pryor CE, Flatté ME (2006) Phys Rev Lett 026804:96Google Scholar
  31. 31.
    Van Bree J, Silov AYu, Koenraad PM, Flatté ME, Pryor CEGoogle Scholar
  32. 32.
    Bayer M, Kuther A, Forchel A, Gorbunov A, Timofeev VB, Schafer F, Reithmaier JP (1999) Phys Rev Lett 82Google Scholar
  33. 33.
    Bayer M et al (2002) Phys Rev B 65:195315CrossRefGoogle Scholar
  34. 34.
    Hogele A et al (2004) Phys Rev Lett 93:217401CrossRefGoogle Scholar
  35. 35.
    Tartakovskii AI et al (2004) Phys Rev B 70:193303CrossRefGoogle Scholar
  36. 36.
    Langbein W et al (2004) Phys Rev B 69:161301 (R)CrossRefGoogle Scholar
  37. 37.
    Grundmann M, et al. (1995) Phys Rev B 52:11969CrossRefGoogle Scholar
  38. 38.
    Bester G et al (2003) Phys Rev B 67:161306 (R)CrossRefGoogle Scholar
  39. 39.
    Bester G et al (2005) Phys Rev B 71:045318CrossRefGoogle Scholar
  40. 40.
    Teodoro MD, Campo Jr. VL, Lopez-Richard V, Marega Jr. E, Marques GE, Galvão Gobato Y, Iikawa F, Brasil MJSP, AbuWaar ZY, Dorogan VG, Mazur YuI, Benamara M, Salamo GJ (2010) Phy Rev Lett 104:086401CrossRefGoogle Scholar
  41. 41.
    Dantas L, Furtado C, SilvaNetto AL (2015) Phys Lett A 379: 11–15CrossRefGoogle Scholar
  42. 42.
    Ortner G et al (2005) Phys Rev B 71:125335CrossRefGoogle Scholar
  43. 43.
    Babinski A et al (2006) Phys Rev B 74:075310CrossRefGoogle Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2016

Authors and Affiliations

  • R. Naouari
    • 1
    Email author
  • W. Ouerghi
    • 1
  • F. Bernardot
    • 2
  • C. Testelin
    • 2
  • M. A. Maaref
    • 1
  • J. Martinez-Pastor
    • 3
  • D. Granados
    • 4
  • J. M. Garcia
    • 4
  1. 1.Laboratoire matériaux, molécules et Applications, Institut Préparatoire aux Etudes Scientifiques et TechniquesUniversité CarthageTunisTunisia
  2. 2.Institut de Nanosciences de ParisUniversité de Pierre Marie CurieUnité mixte de rechercheFrance
  3. 3.Instituto de Ciencia de los MaterialsUniversidad de ValenciaValenciaSpain
  4. 4.Instituto de Microelectrónica de MadridMadridSpain

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