, Volume 7, Issue 3, pp 283–291 | Cite as

Investigation of Novel Silicon PV Cells of a Lateral Type

  • A. AxelevitchEmail author
  • V. Palankovski
  • S. Selberherr
  • G. Golan
Original Paper


Solar cells made of single-crystalline silicon, as alternative energy sources, became the most widely used solar cells in recent years. The mainstream manufacturing approach is to process the cells and assemble these into photovoltaic (PV) modules. However, the direct conversion of solar energy into electricity using the PV effect suffers from low efficiency. Thus, increasing the conversion efficiency at low production costs becomes the main goal of solar cell manufacturers. One way to increase the efficiency of a solar cell is to use an ultra-wide layer of intrinsic semiconductor as the depletion region of a PN junction. In our work, we present a novel geometrical concept of PIN structure for PV applications. The width of the intrinsic layer in our construction is 5-20 mm. Moreover, in our novel structure, the light irradiation acts directly on the active region of the PV cell, which enables bi-facial irradiation and results in ∼28 % conversion efficiency. A low cost fabrication is ensured in our design due to a new manufacturing technology by eliminating some expensive processes, such as photolithography. The feasibility proof of the novel concept in mono-crystalline silicon solar cells is presented. We demonstrate simulation results and preliminary experimental results confirming our approach.


Single-crystalline silicon PIN structure Lateral PV cell Simulation 


Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Zakhidov RA (1994) Efficiency of solar cells. Appl Solar Energy 30/6:71–74Google Scholar
  2. 2.
    Burgers AR (1999) How to design optimal metallization patterns for solar cells. Prog Photovoltaics 7:457–461Google Scholar
  3. 3.
    Verlinden PJ, Blakers AW, Weber KJ, Babaei J, Everett V, Kerr MJ, Stuckings MF, Gordeev D, Stocks MJ (2006) SliverⓇ solar cells: a new thin-crystalline silicon photovoltaic technology. Sol Ener Mater Sol C 90:3422–3430Google Scholar
  4. 4.
    Minami T (2005) Transparent conducting oxide semiconductors for transparent electrodes. Semicond Sci Tech 20:S35–S44Google Scholar
  5. 5.
    Axelevitch A, Golan G (2007) Efficiency evaluation of multi-junction thin film solar cells, 26th IVS annual conference technical workshop, Israel, ES-04Google Scholar
  6. 6.
    Goetzberger A, Knobloch J, Voss B (1998) Crystalline Silicon Solar Cells. Wiley, ChichesterGoogle Scholar
  7. 7.
    Axelevitch A, Golan G (2010) Efficiency analysis for multi-junction PV hetero-structures. In: Tanaka H, Yamashita K (eds) Photovoltaics: developments, applications and impact. Nova Science, New York, pp 213–247Google Scholar
  8. 8.
    Shah A (2010) Thin-film silicon solar cells. EPFL Press, LausanneCrossRefGoogle Scholar
  9. 9.
    Sze SM (1981) Physics of semiconductor devices. Wiley, New YorkGoogle Scholar
  10. 10.
    Shah A, Platz R, Keppner H (1995) Thin film silicon solar cells: a review and selected trends. Sol Ener Mater Sol C 38:501– 520Google Scholar
  11. 11.
    Taur Y, Ning TH (2001) Fundamentals of modern VLSI devices. Cambridge University Press, CambridgeGoogle Scholar
  12. 12.
    Van Zeghbroeck B (2007) Principles of semiconductor devices,
  13. 13.
    Selberherr S (1984) Analysis and simulation of semiconductor devices. Springer-Verlag, Wien-New YorkCrossRefGoogle Scholar
  14. 14.
    ATLAS framework integrated silicon device simulator (1998) Silvaco InternationalGoogle Scholar
  15. 15.
    David Y, Golan G, Axelevitch A (2011) Simulation study of built-in electric field in lateral P-I-N silicon structure, 13th meeting on optical engineering and science in Israel –3rd OASIS, Israel, S5P1Google Scholar
  16. 16.
    Vitanov S, Vitanov P, Palankovski V (2008) Two-dimensional numerical optimization of MIS solar cell on N-type silicon, 23rd EUPVSEC 1743–1745Google Scholar
  17. 17.
    Golan G, Axelevitch A, Shavit R (2011) Photoelectric structure and method of manufacturing thereof, EP 2335290, H01L31/024Google Scholar
  18. 18.
    Taguchi M, Yano A, Tohoda S, Matsuyama K, Nakamura Y, Nishiwaki T, Fujita K, Maruyama E (2014) 24.7 % Record efficiency HIT solar cell on thin Silicon wafer. IEEE J Photovolt 4/1:96–99Google Scholar
  19. 19.
    Cousins PJ, Smith DD, Luan HC, Manning J, Dennis TD, Waldhauer A, Wilson KE, Harley G, Mulligan WP (2010) Generation 3: improved performance at lower cost. In: Proceedings 35th IEEE PVSC. Honolulu, pp 275–278Google Scholar

Copyright information

© Springer Science+Business Media Dordrecht 2014

Authors and Affiliations

  • A. Axelevitch
    • 1
    Email author
  • V. Palankovski
    • 2
  • S. Selberherr
    • 2
  • G. Golan
    • 1
  1. 1.Holon Institute of Technology (HIT)HolonIsrael
  2. 2.Institute for MicroelectronicsTU WienViennaAustria

Personalised recommendations