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Polishing Characteristics of MnO2 Polishing Slurry on the Si-face of SiC Wafer

  • Tao YinEmail author
  • Tosiro Doi
  • Syuhei Kurokawa
  • Zhao zhong Zhou
  • Kai ping Feng
Regular Paper
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Abstract

To realize an efficient and high-quality chemical-mechanical polishing process for the surface of a SiC wafer, a new type of MnO2 slurry is developed employing the multi-valence and oxidation-reduction characteristics of MnO2 particles. This slurry is utilized to polish the Si-face of SiC wafers. In this paper, the influences of the polishing particle concentration and the pH of slurry on MRR are analyzed, the polishing performance of the MnO2 slurry is studied, and the polishing mechanism of the MnO2 slurry on the SiC wafer is determined. The polishing mechanism of the MnO2 slurry is verified by selecting commonly used additives, such as KMnO4, and the influence of the additive amount on the MRR is analyzed. Finally, the surface morphology of the material after polishing is observed with analytical instruments. The experimental results show that the MRR of the MnO2 slurry is highly dependent on the pH value of the slurry. The MnO2 particles tend to convert into MnO4- ions in an alkaline environment, and the strong oxidizing property of MnO4- ions greatly improves the polishing efficiency. As the MnO4- ion concentration increases, the MRR can reach over 600 nm/h, and an ultra-smooth surface with a surface

Keywords

Chemical mechanical polishing(CMP) Material removal rate MnO2 slurry SiC wafer Surface roughness 

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Copyright information

© Korean Society for Precision Engineering and Springer-Verlag GmbH Germany, part of Springer Nature 2018

Authors and Affiliations

  1. 1.College of Mechanical EngineeringQuzhou UniversityQuzhouChina
  2. 2.Department of Mechanical Engineering Precision Machining Technology LaboratoryKyushu UniversityFukuokaJapan

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