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Analysis of removal mechanism on oxide CMP using mixed abrasive slurry

  • Hojun Lee
  • Haedo JeongEmail author
Short Communication

Abstract

Mixed abrasive slurry (MAS) is one of the non-traditional slurries with more than two different sizes, shapes or materials of abrasives which are to improve a chemical mechanical polishing (CMP) performance such as a removal rate. This paper focuses on the MAS mixed with two different sized abrasives and controlled by mixing ratio. Hybrid effect of the MAS was investigated from the removal mechanism of the mixed abrasives on oxide film. Experiments have been implemented with a 4-inch wafer with silicon dioxide film and KOH-based colloidal silica slurries. The slurry has two different sizes, 30 nm and 70 nm, with concentration of 1~30 wt%. The effects of abrasive concentration and mixing ratio were investigated in the oxide CMP in order to achieve high removal rate. During the oxide CMP with the MAS, the contact condition of abrasives was changed by mixing ratio. Through the experiment, it could be seen that two-body and three-body abrasions occur in mixed abrasive slurry according to the particle concentration. Finally, we could see that the proper ratio to achieve high removal rate was 2:1 (D30:D70) since most of the abrasives were active in material removal and carried out two-body abrasion.

Keywords

CMP Oxide Mixed abrasive slurry Removal rate Removal mechanism 

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References

  1. 1.
    Lee, H., Park, Y., Lee, S., and Jeong, H., “Preliminary Study on the Effect of Spray Slurry Nozzle in CMP for Environmental Sustainability,” Int. J. Precis. Eng. Manuf., Vol. 15, No. 6, pp. 995–1000, 2014.CrossRefGoogle Scholar
  2. 2.
    Lee, C., Lee, H., Jeong, M., and Jeong, H., “A Study on the Correlation between Pad Property and Material Removal Rate in CMP,” Int. J. Precis. Eng. Manuf., Vol. 12, No. 5, pp. 917–920, 2011.CrossRefMathSciNetGoogle Scholar
  3. 3.
    Lee, H., Jeong, H., and Dornfeld, D., “Semi-Empirical Material Rate Distribution Model for SiO2 Chemical Mechanical Polishing (CMP) Processes,” Precision Engineering, Vol. 37, No. 2, pp. 483–490, 2013.CrossRefGoogle Scholar
  4. 4.
    Cook, L. M., “Chemical Processes in Glass Polishing,” Journal of Non-Crystalline Solids, Vol. 120, No. 1, pp. 152–171, 1990.CrossRefGoogle Scholar
  5. 5.
    Tomozawa, M., “Oxide CMP Mechanisms,” Solid State Technology, Vol. 40, No. 7, pp. 169–175, 1997.Google Scholar
  6. 6.
    Nogami, M. and Tomozawa, M., “Effect of Stress on Water Diffusion in Silica Glass,” Journal of the American Ceramic Society, Vol. 67, No. 2, pp. 151–154, 1984.CrossRefGoogle Scholar
  7. 7.
    Kamigata, Y., Kurata, Y., Masuda, K., Amanokura, J., Yoshida, M., and Hanazono, M., “Why Abrasive Free Cu Slurry is Promising,” Materials Research Society Symposium Proceedings, Vol. 671, p. M1.3, 2001.CrossRefGoogle Scholar
  8. 8.
    Carpio, R., Farkas, J., and Jairath, R., “Initial Study on Copper CMP Slurry Chemistries,” Thin Solid Films, Vol. 266, No. 2, pp. 238–244, 1995.CrossRefGoogle Scholar
  9. 9.
    Yano, H., Matsui, Y., Minamihaba, G., Kawahashi, N., and Hattori, M., “High-Performance CMP Slurry With Inorganic/Resin Abrasive for Al/Low-k Damascene,” Materials Research Society Symposium Proceedings, Vol. 671, Paper No. M2.4, 2001.CrossRefGoogle Scholar
  10. 10.
    Tomozawa, M., “Oxide CMP Mechanisms,” Solid State Technology, Vol. 40, No. 7, pp. 169–175, 1997.Google Scholar
  11. 11.
    Philipossian, A., and Olsen, S., “Fundamental Tribological and Removal Rate Studies of Inter-Layer Dielectric Chemical Mechanical Planarization,” Japanese Journal of Applied Physics, Vol. 42, No. 10, pp. 6371–6379, 2003.CrossRefGoogle Scholar
  12. 12.
    Luo, J. and Dornfeld, D. A., “Material Removal Regions in Chemical Mechanical Planarization for Submicron Integrated Circuit Fabrication: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution, and Wafer-Pad Contact Area,” IEEE Transactions on Semiconductor Manufacturing, Vol. 16, No. 1, pp. 45–56, 2003.CrossRefGoogle Scholar
  13. 13.
    Choi, W., Abiade, J., Lee, S. M., and Singh, R. K., “Effects of Slurry Particles on Silicon Dioxide CMP,” Journal of the Electrochemical Society, Vol. 151, No. 8, pp. G512–G522, 2004.CrossRefGoogle Scholar
  14. 14.
    Zhao, Y. and Chang, L., “A Micro-Contact and Wear Model for Chemical-Mechanical Polishing of Silicon Wafers,” Wear, Vol. 252, No. 3, pp. 220–226, 2002.CrossRefGoogle Scholar
  15. 15.
    Luo, J. and Dornfeld, D. A., “Material Removal Mechanism in Chemical Mechanical Polishing: Theory and Modeling,” IEEE Transactions on Semiconductor Manufacturing, Vol. 14, No. 2, pp. 112–133, 2001.CrossRefGoogle Scholar

Copyright information

© Korean Society for Precision Engineering and Springer-Verlag Berlin Heidelberg 2015

Authors and Affiliations

  1. 1.Graduate School of Mechanical EngineeringPusan National UniversityBusanSouth Korea

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