Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors
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Amorphous indium—gallium—zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn24O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies.
KeywordsInGaZnO nanowires thin-film transistors superlattice
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This work is financially supported by the National Natural Science Foundation of China (No. 51672229), the General Research Fund (CityU 11211317) and the Theme-based Research (T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, and the Science Technology and Innovation Committee of Shenzhen Municipality (NO. JCYJ20170818095520778), and a grant from the Shenzhen Research Institute, City University of Hong Kong.
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