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Nano Research

, Volume 12, Issue 8, pp 1796–1803 | Cite as

Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

  • Fangzhou Li
  • SenPo Yip
  • Ruoting Dong
  • Ziyao Zhou
  • Changyong Lan
  • Xiaoguang Liang
  • Dapan Li
  • You Meng
  • Xiaolin Kang
  • Johnny C. HoEmail author
Research Article

Abstract

Amorphous indium—gallium—zinc oxide (a-IGZO) materials have been widely explored for various thin-film transistor (TFT) applications; however, their device performance is still restricted by the intrinsic material issues especially due to their non-crystalline nature. In this study, highly crystalline superlattice-structured IGZO nanowires (NWs) with different Ga concentration are successfully fabricated by enhanced ambient-pressure chemical vapor deposition (CVD). The unique superlattice structure together with the optimal Ga concentration (i.e., 31 at.%) are found to effectively modulate the carrier concentration as well as efficiently suppress the oxygen vacancy formation for the superior NW device performance. In specific, the In1.8Ga1.8Zn24O7 NW field-effect transistor exhibit impressive device characteristics with the average electron mobility of ~ 110 cm2·V−1·s−1 and on/off current ratio of ~ 106. Importantly, these NWs can also be integrated into NW parallel arrays for the construction of high-performance TFT devices, in which their performance is comparable to many state-of-the-art IGZO TFTs. All these results can evidently indicate the promising potential of these crystalline superlattice-structured IGZO NWs for the practical utilization in next-generation metal-oxide TFT device technologies.

Keywords

InGaZnO nanowires thin-film transistors superlattice 

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Notes

Acknowledgements

This work is financially supported by the National Natural Science Foundation of China (No. 51672229), the General Research Fund (CityU 11211317) and the Theme-based Research (T42-103/16-N) of the Research Grants Council of Hong Kong SAR, China, and the Science Technology and Innovation Committee of Shenzhen Municipality (NO. JCYJ20170818095520778), and a grant from the Shenzhen Research Institute, City University of Hong Kong.

Supplementary material

12274_2019_2434_MOESM1_ESM.pdf (3 mb)
Crystalline InGaZnO quaternary nanowires with superlattice structure for high-performance thin-film transistors

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Copyright information

© Tsinghua University Press and Springer-Verlag GmbH Germany, part of Springer Nature 2019

Authors and Affiliations

  • Fangzhou Li
    • 1
  • SenPo Yip
    • 1
    • 2
    • 3
  • Ruoting Dong
    • 1
    • 2
  • Ziyao Zhou
    • 1
    • 2
  • Changyong Lan
    • 1
  • Xiaoguang Liang
    • 1
  • Dapan Li
    • 1
  • You Meng
    • 1
  • Xiaolin Kang
    • 1
  • Johnny C. Ho
    • 1
    • 2
    • 3
    • 4
    Email author
  1. 1.Department of Materials Science and EngineeringCity University of Hong KongHong KongChina
  2. 2.Shenzhen Research InstituteCity University of Hong KongShenzhenChina
  3. 3.State Key Laboratory of Terahertz and Millimeter WavesCity University of Hong KongHong KongChina
  4. 4.Centre for Functional PhotonicsCity University of Hong KongHong KongChina

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