Trap and 1/f-noise effects at the surface and core of GaN nanowire gate-all-around FET structure
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Keywordsgate-all-around field effect transistor (FET) nanowire GaN trap 1/f-noise
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This work was supported by the Basic Science Research Program through the NRF funded by Ministry of Education (Nos. 2013R1A6A3A04057719 and NRF-2018R1A6A1A03025761) and was also funded by the Ministry of Science, ICT and Fusion Research (No. 2018R1D1A1B07040603) and BK21 Plus funded by the Ministry of Education (No. 21A20131600011).
- Kang, H. S.; Siva Pratap Reddy, M.; Kim, D. S.; Kim, K. W.; Ha, J. B.; Lee, Y. S.; Choi, H. C.; Lee, J. H. Effect of oxygen species on the positive flatband voltage shift in Al2O3/GaN metal-insulator-semiconductor capacitors with post-deposition annealing. J. Phys. D Appl. Phys. 2013, 46, 155101.CrossRefGoogle Scholar
- Nicollian, E. H.; Brews, J. R. MOS (Metal Oxide Semiconductor) Physics and Technology; John Wiley & Sons: New York, 1982.Google Scholar