Black phosphorus inverter devices enabled by in-situ aluminum surface modification
- 85 Downloads
Two-dimensional black phosphorus (BP) generally exhibits a hole-dominated transport characteristic when configured as field-effect transistor devices. The effective control of charge carrier type and concentration is very crucial for the application of BP in complementary electronics. Herein, we report a facile and effective electron doping methodology on BP, through in situ surface modification with aluminum (Al). The electron mobility of few-layer BP is found to be largely enhanced to ∼ 10.6 cm2·V–1·s–1 by over 6 times after aluminum modification. In situ photoelectron spectroscopy characterization reveals the formation of Al–P covalent bond at the interface, which can also serve as local gate to tune the transport properties in BP layers. Finally, a spatially-controlled aluminum doping technique is employed to establish a p–n homojunction on a single BP flake, and hence to realize the complementary inverter devices, where the highest gain value of ∼ 33 is obtained.
Keywordsblack phosphorus aluminum surface doping electron mobility inverter
Unable to display preview. Download preview PDF.
Authors acknowledge the financial support from the National Natural Science Foundation of China (Nos. 21573156 and 21872100), Natural Science Foundation of Jiangsu Province (No. BK20170005), Singapore MOE Grants R143-000-652-112 and R143-000-A43-114, and Fundamental Research Foundation of Shenzhen (No. JCYJ20170817100405375).
- Zhang, J. L.; Han, C.; Hu, Z. H.; Wang, L.; Liu, L.; Wee, A. T. S.; Chen, W. 2D phosphorene: Epitaxial growth and interface engineering for electronic devices. Adv. Mater., in press, DOI: 10.1002/adma.201802207.Google Scholar