Nano Research

, Volume 11, Issue 3, pp 1227–1237 | Cite as

High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks

  • Hongchao Zhang
  • You Meng
  • Longfei Song
  • Linqu Luo
  • Yuanbin Qin
  • Ning Han
  • Zaixing Yang
  • Lei Liu
  • Johnny C. HoEmail author
  • Fengyun WangEmail author
Research Article


Although In2O3 nanofibers (NFs) are well-known candidates as active materials for next-generation, low-cost electronics, these NF based devices still suffer from high leakage current, insufficient on–off current ratios (Ion/Ioff), and large, negative threshold voltages (VTH), leading to poor device performance, parasitic energy consumption, and rather complicated circuit design. Here, instead of the conventional surface modification of In2O3 NFs, we present a one-step electrospinning process (i.e., without hot-press) to obtain controllable Mg-doped In2O3 NF networks to achieve high-performance enhancement-mode thin-film transistors (TFTs). By simply adjusting the Mg doping concentration, the device performance can be manipulated precisely. For the optimal doping concentration of 2 mol%, the devices exhibit a small VTH (3.2 V), high saturation current (1.1 × 10–4 A), large on/off current ratio (>108), and respectable peak carrier mobility (2.04 cm2/(V·s)), corresponding to one of the best device performances among all 1D metal-oxide NFs based devices reported so far. When high-κ HfOx thin films are employed as the gate dielectric, their electron mobility and VTH can be further improved to 5.30 cm2/(V·s) and 0.9 V, respectively, which demonstrates the promising prospect of these Mg-doped In2O3 NF networks for highperformance, large-scale, and low-power electronics.


In2O3 nanofiber transistor doping threshold voltage enhancement mode 


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The work was financially supported by the National Natural Science Foundation of China (Nos. 51402160, 51302154, and 51672229), the General Research Fund of the Research Grants Council of Hong Kong, China (No. CityU 11275916), the Natural Science Foundation of Shandong Province, China (No. ZR2014EMQ011), the Taishan Scholar Program of Shandong Province, China, the Science Technology, and Innovation Committee of Shenzhen Municipality (No. JCYJ20160229165240684), and was supported by a grant from the Shenzhen Research Institute, City University of Hong Kong. The work was also supported by National Demonstration Center for Experimental Applied Physics Education (Qingdao University).

Supplementary material

12274_2017_1735_MOESM1_ESM.pdf (1.7 mb)
High-performance enhancement-mode thin-film transistors based on Mg-doped In2O3 nanofiber networks


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Copyright information

© Tsinghua University Press and Springer-Verlag GmbH Germany 2018

Authors and Affiliations

  • Hongchao Zhang
    • 1
  • You Meng
    • 1
  • Longfei Song
    • 1
  • Linqu Luo
    • 1
  • Yuanbin Qin
    • 2
  • Ning Han
    • 3
  • Zaixing Yang
    • 4
  • Lei Liu
    • 1
  • Johnny C. Ho
    • 5
    • 6
    • 7
    Email author
  • Fengyun Wang
    • 1
    Email author
  1. 1.College of Physics and Cultivation Base for State Key LaboratoryQingdao UniversityQingdaoChina
  2. 2.Center for Advancing Materials Performance from the Nanoscale, State Key Laboratory for Mechanical Behavior of MaterialsXi’an Jiaotong UniversityXi’anChina
  3. 3.State Key Laboratory of Multiphase Complex Systems, Institute of Process EngineeringChinese Academy of SciencesBeijingChina
  4. 4.School of Microelectronics and Center of NanoelectronicsShandong UniversityJinanChina
  5. 5.Department of Materials Science and EngineeringCity University of Hong KongKowloon, Hong KongChina
  6. 6.State Key Laboratory of Millimeter WavesCity University of Hong KongKowloon, Hong KongChina
  7. 7.Shenzhen Research InstituteCity University of Hong KongShenzhenChina

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