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Nano Research

, Volume 9, Issue 10, pp 3018–3026 | Cite as

Photoluminescence monitoring of oxide formation and surface state passivation on InAs quantum dots exposed to water vapor

  • Giovanna TrevisiEmail author
  • Luca Seravalli
  • Paola Frigeri
Research Article

Abstract

The room-temperature light emission of uncapped III-V semiconductor quantum dots is used to investigate the properties and evolution of the surface under exposure to a humid environment. Enhanced photoluminescence intensity resulting from exposure to polar molecules has already been reported; here we demonstrate that the external environment also has a relevant effect on the emission energy of quantum dots. Experimental results are interpreted on the basis of a model of the quantum system that takes into account the formation of oxide on pristine III-V surfaces and the presence of surface states. As a result of our study, we can clearly distinguish the effect of surface oxidation from that of surface state passivation on the emission of InAs surface quantum dots. This work sheds new light on the properties of semiconductor surface quantum dots as building blocks of novel and highly efficient sensing devices based on optical transduction.

Keywords

epitaxial quantum dots surface states oxide photoluminescence quantum modeling optical nanosensor 

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Photoluminescence monitoring of oxide formation and surface state passivation on InAs quantum dots exposed to water vapor

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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  • Giovanna Trevisi
    • 1
    Email author
  • Luca Seravalli
    • 1
  • Paola Frigeri
    • 1
  1. 1.CNR-IMEM InstituteParmaItaly

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