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Nano Research

, Volume 9, Issue 3, pp 774–778 | Cite as

Topological to trivial insulating phase transition in stanene

  • Michel Houssa
  • Bas van den Broek
  • Konstantina Iordanidou
  • Anh Khoa Augustin Lu
  • Geoffrey Pourtois
  • Jean-Pierre Locquet
  • Valery Afanas’ev
  • André Stesmans
Research Article
First Online:
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Accepted:

Abstract

Electronic properties of stanene, the Sn counterpart of graphene are theoretically studied using first-principles simulations. The topological to trivial insulating phase transition induced by an out-of-plane electric field or by quantum confinement effects is predicted. The results highlight the potential to use stanene nanoribbons in gate-voltage controlled dissipationless spin-based devices and are used to set the minimal nanoribbon width for such devices, which is typically approximately 5 nm.

Keywords

two-dimensional (2D) materials topological insulators density functional theory (DFT) simulations electronic structure 
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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2016

Authors and Affiliations

  • Michel Houssa
    • 1
  • Bas van den Broek
    • 1
  • Konstantina Iordanidou
    • 1
  • Anh Khoa Augustin Lu
    • 1
    • 2
  • Geoffrey Pourtois
    • 2
  • Jean-Pierre Locquet
    • 1
  • Valery Afanas’ev
    • 1
  • André Stesmans
    • 1
  1. 1.Department of Physics and AstronomyUniversity of LeuvenLeuvenBelgium
  2. 2.imecLeuvenBelgium

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