Nano Research

, Volume 8, Issue 4, pp 1075–1080 | Cite as

Wrinkle-free graphene with spatially uniform electrical properties grown on hot-pressed copper

  • Jeong Hun Mun
  • Joong Gun Oh
  • Jae Hoon Bong
  • Hai Xu
  • Kian Ping Loh
  • Byung Jin Cho
Research Article
First Online:
Received:
Revised:
Accepted:

Abstract

The chemical vapor deposition (CVD) of graphene on Cu substrates enables the fabrication of large-area monolayer graphene on desired substrates. However, during the transfer of the synthesized graphene, topographic defects are unavoidably formed along the Cu grain boundaries, degrading the electrical properties of graphene and increasing the device-to-device variability. Here, we introduce a method of hot-pressing as a surface pre-treatment to improve the thermal stability of Cu thin film for the suppression of grain boundary grooving. The flattened Cu thin film maintains its smooth surface even after the subsequent high temperature CVD process necessary for graphene growth, and the formation of graphene without wrinkles is realized. Graphene field effect transistors (FETs) fabricated using the graphene synthesized on hot-pressed Cu thin film exhibit superior field effect mobility and significantly reduced device-to-device variation.

Keywords

CVD graphene graphene synthesis graphene wrinkle graphene field effect transistor 
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Supplementary material

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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Jeong Hun Mun
    • 1
  • Joong Gun Oh
    • 1
  • Jae Hoon Bong
    • 1
  • Hai Xu
    • 2
  • Kian Ping Loh
    • 2
  • Byung Jin Cho
    • 1
  1. 1.Department of Electrical EngineeringKAISTDaejeonKorea
  2. 2.Department of ChemistryNational University of SingaporeSingaporeSingapore

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