Nano Research

, Volume 7, Issue 9, pp 1243–1253 | Cite as

Te-seeded growth of few-quintuple layer Bi2Te3 nanoplates

  • Yanyuan Zhao
  • Maria de la Mata
  • Richard L. J. Qiu
  • Jun Zhang
  • Xinglin Wen
  • Cesar Magen
  • Xuan P. A. Gao
  • Jordi Arbiol
  • Qihua Xiong
Research Article

Abstract

We report on a Te-seeded epitaxial growth of ultrathin Bi2Te3 nanoplates (down to three quintuple layers (QL)) with large planar sizes (up to tens of micrometers) through vapor transport. Optical contrast has been systematically investigated for the as-grown Bi2Te3 nanoplates on the SiO2/Si substrates, experimentally and computationally. The high and distinct optical contrast provides a fast and convenient method for the thickness determination of few-QL Bi2Te3 nanoplates. By aberration-corrected scanning transmission electron microscopy, a hexagonal crystalline structure has been identified for the Te seeds, which form naturally during the growth process and initiate an epitaxial growth of the rhombohedralstructured Bi2Te3 nanoplates. The epitaxial relationship between Te and Bi2Te3 is identified to be perfect along both in-plane and out-of-plane directions of the layered nanoplate. Similar growth mechanism might be expected for other bismuth chalcogenide layered materials.

Keywords

Te nucleation seed epitaxial growth Bi2Te3 few-quintuple layer TEM cross-section optical contrast 

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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2014

Authors and Affiliations

  • Yanyuan Zhao
    • 1
  • Maria de la Mata
    • 2
  • Richard L. J. Qiu
    • 3
  • Jun Zhang
    • 1
  • Xinglin Wen
    • 1
  • Cesar Magen
    • 4
  • Xuan P. A. Gao
    • 3
  • Jordi Arbiol
    • 2
    • 5
  • Qihua Xiong
    • 1
    • 6
  1. 1.Division of Physics and Applied Physics, School of Physical and Mathematical SciencesNanyang Technological UniversitySingaporeSingapore
  2. 2.Institut de Ciència de Materials de BarcelonaICMAB-CSICBellaterra, CATSpain
  3. 3.Department of PhysicsCase Western Reserve UniversityClevelandUSA
  4. 4.Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragon (INA) — ARAID and Departamento de Fisica de la Materia CondensadaUniversidad de ZaragozaZaragozaSpain
  5. 5.Institució Catalana de Recerca i Estudis Avançats (ICREA)Barcelona, CATSpain
  6. 6.NOVITAS, Nanoelectronics Centre of Excellence, School of Electrical and Electronic EngineeringNanyang Technological UniversitySingaporeSingapore

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