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Short channel field-effect transistors from highly enriched semiconducting carbon nanotubes

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Abstract

Semiconducting single-walled carbon nanotubes (s-SWNTs) with a purity of ∼98% have been obtained by gel filtration of arc-discharge grown SWNTs with diameters in the range 1.2–1.6 nm. Multi-laser Raman spectroscopy confirmed the presence of less than 2% of metallic SWNTs (m-SWNTs) in the s-SWNT enriched sample. Measurement of ∼50 individual tubes in Pd-contacted devices with channel length 200 nm showed on/off ratios of >104, conductances of 1.38–5.8 μS, and mobilities in the range 40–150 cm2·V/s. Short channel multi-tube devices with ∼100 tubes showed lower on/off ratios due to residual m-SWNTs, although the on-current was greatly increased relative to the devices made from individual tubes.

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Authors and Affiliations

  1. Department of Chemistry, Stanford University, Stanford, CA, 94305, USA

    Justin Wu, Liming Xie, Guosong Hong & Hongjie Dai

  2. Department of Chemistry and Institute for Advanced Research, Nagoya University, Nagoya, 464-8602, Japan

    Hong En Lim, Boanerges Thendie, Yasumitsu Miyata & Hisanori Shinohara

Authors
  1. Justin Wu
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  2. Liming Xie
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  3. Guosong Hong
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  4. Hong En Lim
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  5. Boanerges Thendie
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  6. Yasumitsu Miyata
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  7. Hisanori Shinohara
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  8. Hongjie Dai
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Correspondence to Hongjie Dai.

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Wu, J., Xie, L., Hong, G. et al. Short channel field-effect transistors from highly enriched semiconducting carbon nanotubes. Nano Res. 5, 388–394 (2012). https://doi.org/10.1007/s12274-012-0219-0

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  • DOI: https://doi.org/10.1007/s12274-012-0219-0

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