Nano Research

, Volume 4, Issue 10, pp 1005–1012 | Cite as

High performance ring oscillators from 10-nm wide silicon nanowire field-effect transistors

  • Ruo-Gu Huang
  • Douglas Tham
  • Dunwei Wang
  • James R. Heath
Research Article


We explore 10-nm wide Si nanowire (SiNW) field-effect transistors (FETs) for logic applications, via the fabrication and testing of SiNW-based ring oscillators. We report on SiNW surface treatments and dielectric annealing, for producing SiNW FETs that exhibit high performance in terms of large on/off-state current ratio (∼108), low drain-induced barrier lowering (∼30 mV) and low subthreshold swing (∼80 mV/decade). The performance of inverter and ring-oscillator circuits fabricated from these nanowire FETs are also explored. The inverter demonstrates the highest voltage gain (∼148) reported for a SiNW-based NOT gate, and the ring oscillator exhibits near rail-to-rail oscillation centered at 13.4 MHz. The static and dynamic characteristics of these NW devices indicate that these SiNW-based FET circuits are excellent candidates for various high-performance nanoelectronic applications. Open image in new window


Silicon nanowire (SiNW) field-effect transistor (FET) surface treatment inverter ring oscillator 


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Supplementary material

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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011

Authors and Affiliations

  • Ruo-Gu Huang
    • 1
  • Douglas Tham
    • 2
  • Dunwei Wang
    • 3
  • James R. Heath
    • 2
  1. 1.Department of Electrical EngineeringCalifornia Institute of TechnologyPasadenaUSA
  2. 2.Division of Chemistry and Chemical EngineeringCalifornia Institute of TechnologyPasadenaUSA
  3. 3.Department of ChemistryBoston CollegeChestnut HillUSA

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