Nano Research

, Volume 3, Issue 4, pp 264–270 | Cite as

In situ etching for total control over axial and radial nanowire growth

  • Magnus T. BorgströmEmail author
  • Jesper Wallentin
  • Johanna Trägårdh
  • Peter Ramvall
  • Martin Ek
  • L. Reine Wallenberg
  • Lars Samuelson
  • Knut Deppert
Open Access
Research Article


We report a method using in situ etching to decouple the axial from the radial nanowire growth pathway, independent of other growth parameters. Thereby a wide range of growth parameters can be explored to improve the nanowire properties without concern of tapering or excess structural defects formed during radial growth. We demonstrate the method using etching by HCl during InP nanowire growth. The improved crystal quality of etched nanowires is indicated by strongly enhanced photoluminescence as compared to reference nanowires obtained without etching.


MOVPE nanowire growth in situ etching photoluminescence 


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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  • Magnus T. Borgström
    • 1
    Email author
  • Jesper Wallentin
    • 1
  • Johanna Trägårdh
    • 1
  • Peter Ramvall
    • 1
  • Martin Ek
    • 2
  • L. Reine Wallenberg
    • 2
  • Lars Samuelson
    • 1
  • Knut Deppert
    • 1
  1. 1.Solid State PhysicsLund UniversityLundSweden
  2. 2.Polymer & Materials Chemistry/nCHREMLund UniversityLundSweden

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