Nano Research

, Volume 3, Issue 7, pp 528–536 | Cite as

Direct comparison of catalyst-free and catalyst-induced GaN nanowires

  • Caroline ChèzeEmail author
  • Lutz Geelhaar
  • Oliver Brandt
  • Walter M. Weber
  • Henning Riechert
  • Steffen Münch
  • Ralph Rothemund
  • Stephan Reitzenstein
  • Alfred Forchel
  • Thomas Kehagias
  • Philomela Komninou
  • George P. Dimitrakopulos
  • Theodoros Karakostas
Open Access
Research Article


GaN nanowires have been grown by molecular beam epitaxy either catalyst-free or catalyst-induced by means of Ni seeds. Under identical growth conditions of temperature and V/III ratio, both types of GaN nanowires are of wurtzite structure elongated in the Ga-polar direction and are constricted by M-plane facets. However, the catalyst-induced nanowires contain many more basal-plane stacking faults and their photoluminescence is weaker. These differences can be explained as effects of the catalyst Ni seeds.


Nanowire nanocolumn molecular beam epitaxy (MBE) photoluminescence stacking faults catalyst 


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Copyright information

© Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2010

Authors and Affiliations

  • Caroline Chèze
    • 1
    • 5
    Email author
  • Lutz Geelhaar
    • 1
    • 5
  • Oliver Brandt
    • 1
  • Walter M. Weber
    • 2
    • 5
  • Henning Riechert
    • 1
    • 4
  • Steffen Münch
    • 3
  • Ralph Rothemund
    • 3
  • Stephan Reitzenstein
    • 3
  • Alfred Forchel
    • 3
  • Thomas Kehagias
    • 4
  • Philomela Komninou
    • 4
  • George P. Dimitrakopulos
    • 4
  • Theodoros Karakostas
    • 4
  1. 1.Paul-Drude-Institut für FestkörperelektronikBerlinGermany
  2. 2.NaMLab gGmbHDresdenGermany
  3. 3.Technische PhysikUniversität WürzburgWürzburgGermany
  4. 4.Physics DepartmentAristotle UniversityThessalonikiGreece
  5. 5.QimondaMunichGermany

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