Evaluating the performance of a MOSFET dosimeter at diagnostic X-ray energies for interventional radiology
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For reducing the risk of skin injury during interventional radiology (IR) procedures, it has been suggested that physicians track patients’ exposure doses. The metal-oxide semiconductor field effect transistor (MOSFET) dosimeter is designed to measure patient exposure dose during radiotherapy applications at megavoltage photon energies. Our purpose in this study was to evaluate the feasibility of using a MOSFET dosimeter (OneDose system) to measure patients’ skin dose during exposure to diagnostic X-ray energies used in IR. The response of the OneDose system was almost constant at diagnostic X-ray energies, although the sensitivity was higher than that at megavoltage photon energies. We found that the angular dependence was minimal at diagnostic X-ray energies. The OneDose is almost invisible on X-ray images at diagnostic energies. Furthermore, the OneDose is easy to handle. The OneDose sensor performs well at diagnostic X-ray energies, although real-time measurements are not feasible. Thus, the OneDose system may prove useful in measuring patient exposure dose during IR.
KeywordsInterventional radiology Radiation injury Exposure dose Radiation dosimetry Metal-oxide semiconductor field effect transistor (MOSFET)
We acknowledge Yoshiaki Morishima and Hiroo Chiba, Department of Radiology, Tohoku Employees’ Pension Welfare Hospital, Japan, for their invaluable assistance. The authors thank Mrs. Tomoko Sasaki for secretarial work.
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