Characterization of GaN/AlGaN epitaxial layers grown by metalorganic chemical vapour deposition for high electron mobility transistor applications
- 119 Downloads
GaN and AlGaN epitaxial layers are grown by a metalorganic chemical vapour deposition (MOCVD) system. The crystalline quality of these epitaxially grown layers is studied by different characterization techniques. PL measurements indicate band edge emission peak at 363.8 nm and 312 nm for GaN and AlGaN layers respectively. High resolution XRD (HRXRD) peaks show FWHM of 272 and 296 arcsec for the (0 0 0 2) plane of GaN and GaN in GaN/AlGaN respectively. For GaN buffer layer, the Hall mobility is 346 cm2/V-s and carrier concentration is 4.5 × 1016/cm3. AFM studies on GaN buffer layer show a dislocation density of 2 × 108/cm2 by wet etching in hot phosphoric acid. The refractive indices of GaN buffer layer on sapphire at 633 nm are 2.3544 and 2.1515 for TE and TM modes respectively.
KeywordsGallium nitride aluminium gallium nitride high electron mobility transistors metalorganic chemical vapour deposition photoluminescence high resolution X-ray diffraction
Unable to display preview. Download preview PDF.
- Y F Wu, S M Wood, R P Smith, S Sheppard, S T Allen, P Parikh and J Milligan, IEDM 1, 152 (2006)Google Scholar
- Fujitsu, Compound Semiconductor Online (http://www.compoundsemi.com/news) June 25 (2007)
- Manish Mathew, B C Joshi, Bhubesh Chander Joshi, C Dhanavantri and B R Singh, Proceedings of DAE Solid State Physics Symposium (Mysore, 2007) Vol. 52, p. 549Google Scholar