Pramana

, Volume 69, Issue 3, pp 481–484 | Cite as

Photoacoustic spectroscopy of thin films of As2S3, As2Se3 and GeSe2

Article
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Abstract

Photoacoustic spectroscopy (PAS) is one of the important branches of spectroscopy, which enables one to detect light-induced heat production following the absorption of pulsed radiation by the sample. As2S3, As2Se3 and GeSe2 exhibit a wide variety of photo-induced phenomena that enable them to be used as optical imaging or storage medium and various electronic devices, including electro-optic information storage devices and optical mass memories. Therefore, accurate measurement of thermal properties of semiconducting films is necessary to study the memory density. The thermal conductivity of thin films of As2S3 (thickness 100 μm and 80 μm), As2Se3 (thickness 100 μm and 80 μm) and GeSe2 (thickness 120 μm and 100 μm) has been measured using PAS technique. Our result shows that the thermal conductivity of thicker films is larger than the thinner films. This can be explained by the thermal resistance effect between the film and the surface of the substrate.

Keywords

Thermal conductivity thermal resistance semiconducting thin films 

PACS Nos

43.35.Vz 43.35.Sx 43.25.Qp 
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Copyright information

© Indian Academy of Sciences 2007

Authors and Affiliations

  1. 1.Department of PhysicsG.B. Pant University of Agriculture and TechnologyPantnagarIndia

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